Recent years have witnessed many breakthroughs in research on graphene (the first two-dimensional atomic crystal) as well as a significant advance in the mass production of this material. This one-atom-thick fabric of carbon uniquely combines extreme mechanical strength, exceptionally high electronic and thermal conductivities, impermeability to gases, as well as many other supreme properties, all of which make it highly attractive for numerous applications. Here we review recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.

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A roadmap for graphene

We examine the current performance and future demands of interconnects to and on silicon chips. We compare electrical and optical interconnects and project the requirements for optoelectronic and optical devices if optics is to solve the major problems of interconnects for future high-performance silicon chips. Optics has potential benefits in interconnect density, energy, and timing. The necessity of low interconnect energy imposes low limits especially on the energy of the optical output devices, with a ~ 10 fJ/bit device energy target emerging. Some optical modulators and radical laser approaches may meet this requirement. Low (e.g., a few femtofarads or less) photodetector capacitance is important. Very compact wavelength splitters are essential for connecting the information to fibers. Dense waveguides are necessary on-chip or on boards for guided wave optical approaches, especially if very high clock rates or dense wavelength-division multiplexing (WDM) is to be avoided. Free-space optics potentially can handle the necessary bandwidths even without fast clocks or WDM. With such technology, however, optics may enable the continued scaling of interconnect capacity required by future chips.

Device Requirements for Optical Interconnects to Silicon Chips

The arbitrary control of electromagnetic waves is a key aim of photonic research. Although, for example, the control of freely propagating waves (PWs) and surface waves (SWs) has separately become possible using transformation optics and metamaterials, a bridge linking both propagation types has not yet been found. Such a device has particular relevance given the many schemes of controlling electromagnetic waves at surfaces and interfaces, leading to trapped rainbows, lensing, beam bending, deflection, and even anomalous reflection/refraction. Here, we demonstrate theoretically and experimentally that a specific gradient-index meta-surface can convert a PW to a SW with nearly 100% efficiency. Distinct from conventional devices such as prism or grating couplers, the momentum mismatch between PW and SW is compensated by the reflection-phase gradient of the meta-surface, and a nearly perfect PW-SW conversion can happen for any incidence angle larger than a critical value. Experiments in the microwave region, including both far-field and near-field characterizations, are in excellent agreement with full-wave simulations. Our findings may pave the way for many applications, including high-efficiency surface plasmon couplers, anti-reflection surfaces, light absorbers, and so on.

http://www.physics.fudan.edu.cn/tps/people/lzhou/papers/84-NM%2011,426.pdf

Gradient-index meta-surfaces as a bridge linking propagating waves and surface waves

Silicon chips dominate electronics while optical fibres dominate long-distance information transfer. Recent work, in search of the best of both worlds, has led to silicon devices capable of modulating light; these show promise but still rely on weak physical mechanisms found in silicon itself. Now a team working at Stanford University and at Hewlett-Packard's Palo Alto labs has developed thin germanium ‘quantum well’ nanostructures grown on silicon that generate a strong quantum-mechanical effect capable of turning light beams on and off. Their performance rivals the best seen in any material. This development may allow silicon/germanium chips to handle both electronics and optics, uniting computing and communications at the integrated chip level. Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such components with optoelectronics for telecommunications and computer interconnections1. Silicon-based optical modulators have recently been successfully demonstrated2,3; but because the light modulation mechanisms in silicon4 are relatively weak, long (for example, several millimetres) devices2 or sophisticated high-quality-factor resonators3 have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger quantum-confined Stark effect (QCSE) mechanism5, which allows modulator structures with only micrometres of optical path length6,7. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics8, but previous silicon–germanium structures have also not shown strong modulation effects9,10,11,12,13. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor; such semiconductors often display much weaker optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed14, low-power15,16,17 optical output devices fully compatible with silicon electronics manufacture.

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Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

As silicon-based electronics approach the limit of improvements to performance and capacity through dimensional scaling, attention in the semiconductor field has turned to graphene, a single layer of carbon atoms arranged in a honeycomb lattice. Its high mobility of charge carriers (electrons and holes) could lead to its use in the next generation of high-performance devices. Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap. But it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators.

A role for graphene in silicon-based semiconductor devices

We present design, fabrication, and characterization of a silicon-on-insulator grating coupler of high efficiency for coupling between a silicon nanophotonic waveguide and a single mode fiber. By utilizing the lag effect of the dry etching process, a grating coupler consisting of nonuniform grooves with different widths and depths is designed and fabricated to maximize the overlapping between the upward wave and the fiber mode. The measured waveguide-to-fiber coupling efficiency of 64% (-1.9 dB) for the transverse electric polarization is achieved by the present nonuniform grating coupler directly defined on a regular silicon-on-insulator wafer.

Highly efficient nonuniform grating coupler for silicon-on-insulator nanophotonic circuits

We present segmented transmission-line (TML) electroabsorption modulators (EAMs) with characteristic impedance close to 50 /spl Omega/. The segmented TML approach allows us to design a traveling-wave EAM with 50 /spl Omega/ impedance and very high bandwidth. The devices show low return loss (<-15 dB) and excellent frequency response up to 50 GHz, and exhibit a maximum model-extrapolated 3 dBe bandwidth (BW) of 90 GHz. An effective modeling tool based on Bloch-wave analysis is derived. Design considerations and TML properties for periodic TML-EAMs are discussed.

Segmented transmission-line electroabsorption modulators

Client-side optics are facing an ever-increasing upgrading pace, driven by upcoming 5G related services and datacenter applications. The demand for a single lane data rate is soon approaching 200 Gbps. To meet such high-speed requirement, all segments of traditional intensity modulation direct detection (IM/DD) technologies are being challenged. The characteristics of electrical and optoelectronic components and the performance of modulation, coding, and digital signal processing (DSP) techniques are being stretched to their limits. In this context, we witnessed technological breakthroughs in several aspects, including development of broadband devices, novel modulation formats and coding, and high-performance DSP algorithms for the past few years. A great momentum has been accumulated to overcome the aforementioned challenges. In this article, we focus on IM/DD transmissions, and provide an overview of recent research and development efforts on key enabling technologies for 200 Gbps per lane and beyond. Our recent demonstrations of 200 Gbps short-reach transmissions with 4-level pulse amplitude modulation (PAM) and discrete multitone signals are also presented as examples to show the system requirements in terms of device characteristics and DSP performance. Apart from digital coherent technologies and advanced direct detection systems, such as Stokes–vector and Kramers–Kronig schemes, we expect high-speed IM/DD systems will remain advantageous in terms of system cost, power consumption, and footprint for short reach applications in the short- to mid- term perspective.

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200 Gbps/Lane IM/DD Technologies for Short Reach Optical Interconnects

We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 μm active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits.

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50 Gb/s hybrid silicon traveling-wave electroabsorption modulator

A monolithically integrated distributed feedback (DFB) laser and traveling-wave electro-absorption modulator (TWEAM) with ges 100 GHz -3 dBe bandwidth suitable for Non-return-to-zero (NRZ) operation with on-off keying (OOK) is presented. The steady-state, small-signal modulation response, microwave reflection, chirp characteristic, and both data operation and transmission were investigated. The DFB-TWEAM was found to be an attractive candidate for future short distance communication in high bitrates systems.

Urban Westergren

Papers

Highly efficient nonuniform grating coupler for silicon-on-insulator nanophotonic circuits

Segmented transmission-line electroabsorption modulators

200 Gbps/Lane IM/DD Technologies for Short Reach Optical Interconnects

50 Gb/s hybrid silicon traveling-wave electroabsorption modulator

Monolithically Integrated 100 GHz DFB-TWEAM