V
Venkatesh Narayanamurti
Researcher at Harvard University
Publications - 258
Citations - 9926
Venkatesh Narayanamurti is an academic researcher from Harvard University. The author has contributed to research in topics: Phonon & Ballistic electron emission microscopy. The author has an hindex of 49, co-authored 258 publications receiving 9399 citations. Previous affiliations of Venkatesh Narayanamurti include Cornell University & Sandia National Laboratories.
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Journal ArticleDOI
Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy
Wei Yi,Venkatesh Narayanamurti,Hong Lu,Michael A. Scarpulla,Arthur C. Gossard,Yong Huang,Jae-Hyun Ryou,Russell D. Dupuis +7 more
TL;DR: In this paper, a model-independent method was developed to self-consistently measure bandgaps of semiconductors and band offsets at semiconductor heterojunctions at 4.2 K.
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A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection
TL;DR: This device structure affords an additional experimental handle to the study of electroluminescence in single nanowires and could be used as a novel approach to two-colour light-emitting devices.
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High-density InP self-assembled quantum dots embedded in In0.5Al0.5P grown by metalorganic chemical vapor deposition
Jae-Hyun Ryou,Russell D. Dupuis,D. T. Mathes,Robert Hull,C. V. Reddy,Venkatesh Narayanamurti +5 more
TL;DR: In this article, the authors describe the characteristics of high-density self-assembled quantum dots embedded in In0.5Al 0.5P cladding layers grown at 650°C on GaAs (100) substrates by metalorganic chemical vapor deposition.
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A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection.
TL;DR: In this paper, the authors present a systematic study of the currentvoltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type.
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Ballistic hot-electron transport in nanoscale semiconductor heterostructures: exact self-energy of a three-dimensional periodic tight-binding Hamiltonian
TL;DR: In this paper, the exact surface Green's function for three-dimensional periodic leads has been calculated for ballistic hot-electron transport in the regime of the lattice constant for semiconductor heterostructures.