V
Venkatesh Narayanamurti
Researcher at Harvard University
Publications - 258
Citations - 9926
Venkatesh Narayanamurti is an academic researcher from Harvard University. The author has contributed to research in topics: Phonon & Ballistic electron emission microscopy. The author has an hindex of 49, co-authored 258 publications receiving 9399 citations. Previous affiliations of Venkatesh Narayanamurti include Cornell University & Sandia National Laboratories.
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Book ChapterDOI
Phonon Emission and Electron Heating in a Two-Dimensional Electron Gas
TL;DR: In this article, the authors report on complementary measurements made on a single interface by observing the energy relaxation of carriers by phonon emission, and correlate the phonon emissions observed with changes in the mobility (μ) as a function of electric field (E).
Journal ArticleDOI
Comment on anomalous dispersion and scattering rates for multiphonon spontaneous decay in He II
TL;DR: In this article, the spontaneous decay threshold energy for high-frequency phonon propagation in He II at saturated vapor pressure at T = 0.1 K was measured using superconducting tin tunnel generators and aluminum tunnel detectors.
Journal ArticleDOI
Manipulation and measurement of nuclear spin over the quantum Hall regime for quantum information processing
TL;DR: In this paper, a method for the management of nuclear spin immersed in a confined quantum Hall electronic system is proposed, which is characterized by: (a) the application of the Overhauser effect for dynamic nuclear polarization, (b) spin measurement using electrical resistance detection techniques, (c) spin control with microwave/radio frequency methods, and (d) the utilization of the electronic spin exciton as a possible mobile spin transfer mechanism for the eventual realization of a logic gate.
Journal ArticleDOI
Vertically integrated optics for ballistic electron emission luminescence : Device and microscopy characterizations
Wei Yi,Ian Appelbaum,Kasey J. Russell,Venkatesh Narayanamurti,Richard Schalek,Micah Hanson,Arthur C. Gossard +6 more
TL;DR: By integrating a p-i-n photodiode photodetector directly into a ballistic electron emission luminescence (BEEL) heterostructure with GaAs quantum-well active region, this paper obtained a photon detection efficiency of more than 10%.
Journal ArticleDOI
Ballistic transport and decay of near zone-edge non-thermal phonons in semiconductors
TL;DR: In this paper, the energy transport of near zone edge transverse phonon pulses generated in the process of non-radiative electronhole pair recombination at T = 1.4 K in GaAs and InP was investigated.