There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

This article reviews acoustic microfiuidics: the use of acoustic fields, principally ultrasonics, for application in microfiuidics. Although acoustics is a classical field, its promising, and indeed perplexing, capabilities in powerfully manipulating both fluids and particles within those fluids on the microscale to nanoscale has revived interest in it. The bewildering state of the literature and ample jargon from decades of research is reorganized and presented in the context of models derived from first principles. This hopefully will make the area accessible for researchers with experience in materials science, fluid mechanics, or dynamics. The abundance of interesting phenomena arising from nonlinear interactions in ultrasound that easily appear at these small scales is considered, especially in surface acoustic wave devices that are simple to fabricate with planar lithography techniques common in microfluidics, along with the many applications in microfluidics and nanofluidics that appear through the literature.

/pdf/microscale-acoustofluidics-microfluidics-driven-via-5bet39j13p.pdf

Microscale acoustofluidics: Microfluidics driven via acoustics and ultrasonics

J. Y. Tsao,* S. Chowdhury, M. A. Hollis,* D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar,* S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons

/pdf/ultrawide-bandgap-semiconductors-research-opportunities-and-49ev1zu2ym.pdf

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

The recent introduction of surface acoustic wave (SAW) technology onto lab-on-a-chip platforms has opened a new frontier in microfluidics. The advantages provided by such SAW microfluidics are numerous: simple fabrication, high biocompatibility, fast fluid actuation, versatility, compact and inexpensive devices and accessories, contact-free particle manipulation, and compatibility with other microfluidic components. We believe that these advantages enable SAW microfluidics to play a significant role in a variety of applications in biology, chemistry, engineering and medicine. In this review article, we discuss the theory underpinning SAWs and their interactions with particles and the contacting fluids in which they are suspended. We then review the SAW-enabled microfluidic devices demonstrated to date, starting with devices that accomplish fluid mixing and transport through the use of travelling SAW; we follow that by reviewing the more recent innovations achieved with standing SAW that enable such actions as particle/cell focusing, sorting and patterning. Finally, we look forward and appraise where the discipline of SAW microfluidics could go next.

Surface acoustic wave microfluidics

Aluminum scandium nitride thin-film bulk acoustic resonators for wide band applications

A shear mode thin film bulk acoustic resonator (FBAR) operating in liquid media together with a microfluidic transport system is presented. The resonator has been fabricated utilizing a recently developed reactive sputter-deposition process for AlN thin films with inclined c-axis relative to the surface normal with a mean tilt of around 30°. The resonator has a resonance frequency of around 1.2 GHz and a Q value in water of around 150. Sensor operation in water and glycerol solutions is characterized. Theoretical analysis of the sensor operation under viscous load as well as of the sensitivity and stability in general is presented. The theoretical predictions are compared with experimental measurements. The results demonstrate clearly the potential of FBAR biosensors for the fabrication of highly sensitive low cost biosensors, bioanalytical tools as well as for liquid sensing in general.

Shear mode AlN thin film electro-acoustic resonant sensor operation in viscous media

This work makes an overview of the progress made during the last decade with regard to a novel class of piezoelectric microwave devices employing acoustic Lamb waves in micromachined thin film membranes. This class of devices is referred to as either thin film Lamb wave resonators or piezoelectric contour-mode resonators both employing thin film aluminum nitride membranes. These devices are of interest for applications in both frequency control and sensing. High quality factor Lamb wave resonators exhibiting low noise, low loss and thermally stable performance are demonstrated and their application in high resolution gravimetric and pressure sensors further discussed. A specific emphasis is put on the ability of these devices to operate in contact with liquids. Future research directions are further outlined.

https://iopscience.iop.org/article/10.1088/0960-1317/23/4/043001/pdf

Thin film Lamb wave resonators in frequency control and sensing applications: a review

The characteristics of one-port aluminum nitride (AlN) Lamb wave resonators utilizing the lowest-order symmetric mode with electrically open, grounded, and floating bottom electrode configurations are theoretically and experimentally investigated in this paper. Finite element analysis is performed to take an insight into the static capacitance characteristics of the AlN Lamb wave resonators with various bottom surface conditions. Without sacrificing the transduction efficiency, the floating bottom electrode is capable of reducing the static capacitance in the AlN thin plate and then promotes an efficient improvement in the effective coupling coefficient (k2eff). In addition, in comparison with the grounded bottom electrode, the employment of the floating bottom electrode offers simple fabrication processes for the micromachined Lamb wave resonators. Experimentally, the AlN Lamb wave resonators without the bottom electrode exhibit an average loaded quality factor (Q) as high as 2676 at the series resonance frequency, but a low average k2eff of 0.19%. On the contrary, the Lamb wave resonators with the electrically floating bottom electrode show the largest average k2eff up to 1.13% among the three topologies but a low average loaded Q of 800 at the series resonance frequency. In contrast to the floating bottom electrode, the Lamb wave resonators with the electrically grounded bottom electrode show a smaller average k2eff of 0.78% and a similar average loaded Q of 758 at the series resonance frequency.

Micromachined One-Port Aluminum Nitride Lamb Wave Resonators Utilizing the Lowest-Order Symmetric Mode

In this work we demonstrate a practically complete temperature compensation of the second harmonic shear mode in a composite Al/AlN/Al/SiO2 thin film bulk acoustic resonator (FBAR) in the temperature range 25 °C–95 °C. The main advantages of this mode are its higher Q value in liquids as well as its higher frequency and hence higher resolution for sensor applications. For comparative reasons the non-compensated fundamental shear mode is also included in these studies. Both modes have been characterized when operated both in air and in pure water. Properties such as Q value, electromechanical coupling, dissipation and sensitivity are studied. An almost complete temperature compensation of the second harmonic shear mode was observed for an oxide thickness of 1.22 µm for an FBAR consisting of 2 µm thick AlN and 200 nm thick Al electrodes. Thus, the measured temperature coefficient of frequency (TCF) in air for the non-compensated fundamental shear mode (1.25 GHz) varied between −31 and −36 ppm °C−1 over the above temperature range while that of the compensated second harmonic shear mode (1.32 GHz) varied between +2 ppm °C−1 and −2 ppm °C−1 over the same temperature interval. When operated in pure water the former type shows a Q value and coupling coefficient, k2t, around 180 and 2%, respectively, whereas for the second harmonic these are 230 and 1.4%, respectively.

https://iopscience.iop.org/article/10.1088/0960-1317/17/3/030/pdf

Ventsislav Yantchev

Papers

Aluminum scandium nitride thin-film bulk acoustic resonators for wide band applications

Shear mode AlN thin film electro-acoustic resonant sensor operation in viscous media

Thin film Lamb wave resonators in frequency control and sensing applications: a review

Micromachined One-Port Aluminum Nitride Lamb Wave Resonators Utilizing the Lowest-Order Symmetric Mode

Temperature compensation of liquid FBAR sensors