Vicky Philipsen

TL;DR: In this article, the reflection and diffraction of extreme ultraviolet (EUV) light from lithographic masks and the projection imaging of these masks by all-reflective systems introduce several significant imaging artifacts such as asymmetric shadowing, size bias between features with different orientations and telecentricity errors.

TL;DR: In this article, a detailed mask stack modeling based on experimental actinic characterization of the EUV mask is presented, where a dedicated mask has been fabricated with line/space gratings down to 40nm half-pitch (at mask level, i.e., 10nm at wafer).

TL;DR: In this article, the authors compared the results of two different simulation approaches for 6% attenuated PSM with line/space structures targeting at a 45 nm resist linewidth for a variety of pitches, for a NA = 1.2 water immersion system.

TL;DR: In this paper, a simulation study of attenuated EUV phase shift masks has identified through multiobjective optimization superior imaging solutions for specific use cases and illumination conditions, demonstrating improvements from a lithographic perspective and compatibility with the full mask supply chain including material deposition, absorber patterning, scanner environment compatibility and mask lifetime.

TL;DR: In this article, the optical properties of the absorber material of the EUV mask were exploited as an M3D mitigation strategy for mask 3D effects at wafer level, which are induced by the interaction between the oblique incident EUV light and the patterned absorber with typical thickness values in the order of several wavelengths.