V
Vincent Aimez
Researcher at Université de Sherbrooke
Publications - 274
Citations - 6854
Vincent Aimez is an academic researcher from Université de Sherbrooke. The author has contributed to research in topics: Solar cell & Ion implantation. The author has an hindex of 27, co-authored 265 publications receiving 5976 citations. Previous affiliations of Vincent Aimez include University of Bordeaux & McGill University.
Papers
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Journal ArticleDOI
Passivation of KMPR microfluidic channels with bovine serum albumin (BSA) for improved hemocompatibility characterized with metal-clad waveguides
Laurence Convert,Vincent Chabot,Pierre-Jean Zermatten,Raymond Hamel,Jean-Pierre Cloarec,Roger Lecomte,Vincent Aimez,Paul G. Charette +7 more
TL;DR: In this paper, an epoxy-based photoresist, similar to SU-8, featuring shorter processing times and superior resistance to fissuring was used to improve hemocompatibility of the material surfaces.
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Optical spatial solitons at the interface between two dissimilar periodic media: theory and experiment
Sergiy Suntsov,Konstantinos G. Makris,D. N. Christodoulides,George I. Stegeman,Roberto Morandotti,Maite Volatier,Vincent Aimez,Richard Arès,E. H. Yang,Gregory J. Salamo +9 more
TL;DR: The power dependence of the solitons at variable distance from the boundary was found to be quite different on opposite sides of the interface and showed evidence for soliton switching between channels with increasing input power.
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Multijunction Solar Cell Designs Using Silicon Bottom Subcell and Porous Silicon Compliant Membrane
Matthew M. Wilkins,Abderraouf Boucherif,Richard Beal,Joan E. Haysom,Jeffrey F. Wheeldon,Vincent Aimez,Richard Arès,Trevor J. Hall,Karin Hinzer +8 more
TL;DR: In this article, a novel approach to the design of multijunction solar cells on silicon substrates for 1-sun applications is described, where a silicon bottom subcell is formed by diffusion of dopants into a silicon wafer.
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Post-growth engineering of InAs/GaAs quantum dots' band-gap using proton implantation and annealing
TL;DR: In this article, a purely proton-implantation induced band gap tuning limit of 131?meV has been achieved for an implantation dose of 5? 1013?cm?2, keeping both the QDs' character and around 46% of the initial integrated PL intensity.
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A novel fabrication technique for multiple-wavelength photonic-integrated devices in InGaAs-InGaAsP laser heterostructures
TL;DR: In this article, a novel ion implantation induced quantum-well (QW) intermixing technique was proposed for the fabrication of multiple wavelength chips in InGaAs-InGaAsP laser structure.