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Vishal Panchal

Researcher at National Physical Laboratory

Publications -  58
Citations -  1570

Vishal Panchal is an academic researcher from National Physical Laboratory. The author has contributed to research in topics: Graphene & Kelvin probe force microscope. The author has an hindex of 21, co-authored 57 publications receiving 1282 citations. Previous affiliations of Vishal Panchal include Royal Holloway, University of London & Coventry Health Care.

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Standardization of surface potential measurements of graphene domains.

TL;DR: In this article, the surface potential (SP) of graphene is directly measured in Hall bar geometry via a combination of electrical functional microscopy and spectroscopy techniques, which enables calibrated work function measurements of graphene domains in ambient conditions with values Φ 1LG ~4.55 ± 0.02
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Water on graphene: review of recent progress

TL;DR: In this article, the effects of water on different types of graphene: epitaxially grown and quasi-free standing on SiC(0 0 0 1), grown by chemical vapour deposition and transfered on SiO2, and exfoliated flakes.
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Epitaxial Graphene and Graphene–Based Devices Studied by Electrical Scanning Probe Microscopy

TL;DR: In this paper, local electrical characterization of epitaxial graphene grown on both Si-and C-faces of 4H-SiC using Electrostatic Force Microscopy and Kelvin Probe force microscopy in ambient conditions and at elevated temperatures is presented.
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Visualization of Grain Structure and Boundaries of Polycrystalline Graphene and Two-Dimensional Materials by Epitaxial Growth of Transition Metal Dichalcogenides.

TL;DR: The visualization method based on van der Waals epitaxy can offer a facile and large-scale labeling technique to investigate the grain structures of various 2D materials, and it will also contribute to understand the relationship between their grain structure and physical properties.
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Express Optical Analysis of Epitaxial Graphene on SiC: Impact of Morphology on Quantum Transport

TL;DR: It is shown that inspection with an optical microscope allows surprisingly simple and accurate identification of single and multilayer graphene domains in epitaxial graphene on silicon carbide (SiC/G) and is informative about nanoscopic details of the SiC topography, making it ideal for rapid and noninvasive quality control of as-grown SiC/ G.