Showing papers by "Vivek Garg published in 2018"
TL;DR: The use of DIBS-instigated plasmon-enhanced GZO can be a novel mean to improve the performance of photovoltaic, photodetector, and sensing devices.
Abstract: The use of the high free-electron concentration in heavily doped semiconductor enables the realization of plasmons. We report a novel approach to generate plasmons in Ga:ZnO (GZO) thin films in the wide spectral range of ∼1.87–10.04 eV. In the grown GZO thin films, dual-ion beam sputtering (DIBS) instigated plasmon is observed because of the formation of different metallic nanoclusters are reported. Moreover, formation of the nanoclusters and generation of plasmons are verified by field emission scanning electron microscope, electron energy loss spectra obtained by ultraviolet photoelectron spectroscopy, and spectroscopic ellipsometry analysis. Moreover, the calculation of valence bulk, valence surface, and particle plasmon resonance energies are performed, and indexing of each plasmon peaks with corresponding plasmon energy peak of the different nanoclusters is carried out. Further, the use of DIBS-instigated plasmon-enhanced GZO can be a novel mean to improve the performance of photovoltaic, photodetect...
48 citations
TL;DR: In this article, Cd-free n-type buffer layers with two different Mg-doped ZnO layers (Mg0.26Zn0.74O, Mg 0.30Zn 0.70O) have been examined using ultraviolet photoelectron spectroscopy.
40 citations
TL;DR: In this article, a novel way of generation of plasmonic features in transparent conducting oxide material in the form of Ga-doped ZnO (GZO) thin films to compensate for the loss of optical absorption due to reduced absorber thickness is demonstrated.
10 citations
TL;DR: In this paper, the surface analysis of CZTSSe thin-film solar cell absorbers was performed for surface and bulk compositional analysis, respectively, and it was observed that the surface of the SiSe absorber is Cu deficient.
Abstract: We present surface analysis of Cu2ZnSn(S,Se)4 (CZTSSe) thin films deposited on Mo/glass substrates. X-ray photoelectron and energy dispersive x-ray spectroscopy has been performed on CZTSSe thin-film solar cell absorbers for surface and bulk compositional analysis, respectively. It is observed that the surface of the CZTSSe absorber is Cu deficient. For further verification of Cu deficiency, spectroscopic ellipsometry has been used to determine the extinction coefficient of CZTSSe thin films with Cu variation. The surface layer has a higher bandgap of 1.79 eV in reference to the bulk film bandgap of 1.5 eV. This surface bandgap increase is beneficial for solar cell performance. The thin film with a Cu deficient surface has a noticeably higher open circuit voltage of 562 mV using a very thin absorber layer of 300 nm in thickness. The open circuit voltage for the Cu deficient surface is 25% higher than that of the Cu rich surface. This analysis gives an understanding into the significance of surface layer engineering for photovoltaic device.
8 citations
01 Jan 2018
1 citations