V
Volker Haeublein
Researcher at Fraunhofer Society
Publications - 10
Citations - 706
Volker Haeublein is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Ion implantation & Logic gate. The author has an hindex of 6, co-authored 10 publications receiving 683 citations. Previous affiliations of Volker Haeublein include University of Erlangen-Nuremberg.
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Journal ArticleDOI
Ion Implantation and Annealing for an Efficient N-Doping of TiO2 Nanotubes
Andrei Ghicov,Jan M. Macak,Hiroaki Tsuchiya,Julia Kunze,Volker Haeublein,Lothar Frey,Patrik Schmuki +6 more
TL;DR: In this paper, self-organized anodic titania nanotube layers were doped with nitrogen successfully using ion implantation, resulting in a N-doped crystalline anatase nanotubite structure with strongly enhanced photocurrent response in both the UV and the visible range.
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TiO2 nanotube layers: Dose effects during nitrogen doping by ion implantation
Andrei Ghicov,Jan M. Macak,Hiroaki Tsuchiya,Julia Kunze,Volker Haeublein,Sebastian Kleber,Patrik Schmuki +6 more
TL;DR: In this article, N-ion implantation was carried out into amorphous and crystalline (anatase) tubes, which showed a disintegration of the morphological integrity.
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NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications
Martin Le-Huu,Frederik F. Schrey,Michael Grieb,H. Schmitt,Volker Haeublein,Anton J. Bauer,Heiner Ryssel,Lorenz Frey +7 more
TL;DR: In this paper, the authors used 4H-SiC MOSFETs to build NMOS logic gates intended for high temperature operation and characterized the logic gates between 25°C and 500°C.
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Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
Christian Strenger,Volker Haeublein,Tobias Erlbacher,Anton J. Bauer,Heiner Ryssel,Ana M. Beltrán,Sylvie Schamm-Chardon,Vincent Mortet,Eléna Bedel-Pereira,Mathieu Lefebvre,Fuccio Cristiano +10 more
TL;DR: In this article, the electron mobility in the inversion channel was measured to be correlated with the structural and chemical properties determined by transmission electron microscopy, and interfacial layer formation and carbon distribution across the SiC/SiO2 interface were considered in relation with the measured Hall electron mobility.
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Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC
TL;DR: The possible contribution of the Poole–Frenkel effect to the conduction mechanism was considered, and it was found that it does not play a dominant role and the possible conduction mechanisms have been identified in the whole measurement range.