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Anton J. Bauer
Researcher at Fraunhofer Society
Publications - 184
Citations - 1816
Anton J. Bauer is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Dielectric & Oxide. The author has an hindex of 21, co-authored 184 publications receiving 1596 citations. Previous affiliations of Anton J. Bauer include University of Erlangen-Nuremberg.
Papers
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Journal ArticleDOI
Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics
V. Yanev,Mathias Rommel,Martin Lemberger,S. Petersen,B. Amon,Tobias Erlbacher,Anton J. Bauer,Heiner Ryssel,Albena Paskaleva,Wenke Weinreich,Christian Fachmann,Johannes Heitmann,Uwe Schroeder +12 more
TL;DR: In this article, tunneling atomic-force microscopy (TUNA) was used for the characterization of morphology in thin high-k dielectric films on a nanoscale.
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Different current conduction mechanisms through thin high-kHfxTiySizO films due to the varying Hf to Ti ratio
TL;DR: In this paper, the electrical behavior of high permittivity (high-k) hafnium-titanium-silicate (HfxTiySizO) layers with different Hf:Ti ratios in the films were investigated.
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Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 films
Wenke Weinreich,R. Reiche,M. Lemberger,G. Jegert,Johannes Müller,L. Wilde,S. Teichert,Johannes Heitmann,Elke Erben,Lars Oberbeck,Uwe Schröder,Anton J. Bauer,Heiner Ryssel +12 more
TL;DR: In this article, the polarities in J-V and C-V characteristics of symmetrical MIM capacitors with amorphous and crystalline Zr" ("1"-"x")Al"xO"2 films and TiN electrodes are evaluated.
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Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs
Viktoryia Uhnevionak,Alexander Burenkov,Christian Strenger,Guillermo P. Ortiz,Eléna Bedel-Pereira,Vincent Mortet,Fuccio Cristiano,Anton J. Bauer,Peter Pichler +8 more
TL;DR: In this article, the effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using current-voltage and Hall-effect measurements.
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Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes
Wenke Weinreich,A. Shariq,Konrad Seidel,Jonas Sundqvist,Albena Paskaleva,Martin Lemberger,Anton J. Bauer +6 more
TL;DR: In this article, the C-V and J-V characteristics of ZrO2 metal-insulator-metal capacitors with TiN electrodes are analyzed in dependence on the O3 pulse time revealing the optimum atomic layer deposition process conditions.