Vincent Mortet

TL;DR: In this paper, the Hall hole mobility of boron-doped homoepitaxial (100) diamond samples has been investigated in the temperature range of 100--900 K, both experimentally and theoretically.

TL;DR: In this paper, high quality surface acoustic wave (SAW) filters based on aluminum nitride (AlN)/diamond layered structures were prepared using the nucleation side of polycrystalline chemical vapor deposition (CVD) diamond, removed from a silicon substrate by wet etching.

TL;DR: In this paper, the authors studied the properties of boron-doped diamond layers with metallic conduction and found that the position of the main Raman bands is proportional to borone concentration, and attributed the downshift and broadening of the diamond line to the domain size effect caused by scattering on borons impurities, secondly to the Fano effect due to electronic Raman interaction, and finally to lattice expansion.

TL;DR: In this article, the authors present the new developments on wide bandgap materials at the Royal Observatory of Belgium (ROB) and present also the LYRA instrument, the BOLD project, and the EUI instrument suite.

TL;DR: Very high frequency surface acoustic wave (SAW) devices based on AlN/diamond layered structures were fabricated by direct writing using e-beam lithography on the nucleation side of chemical vapor deposition diamond.