Vu Ngoc Tran Nguyen

TL;DR: In this article, a remote plasma source is used to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films.

TL;DR: In this paper, a voltage probe is attached to a process-gas distribution faceplate in a semiconductor wafer processing chamber, and an RF power source is activated to generate a plasma between the faceplate and a substrate wafer.

TL;DR: In this article, a method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and an oxidizing gases to deposit an initiation layer by applying an RF power to the electrode.

TL;DR: In this article, a method of forming a cap layer over a dielectric layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the dielectrics layer, where the cap sheet comprises a thickness of about 600 Å or less, and a compressive stress of about 200 MPa or more.

TL;DR: In this paper, a porous pSiCOH interconnect dielectric was developed from mixtures of a SiCOH skeleton precursor and bicycloheptadiene (BCHD) and optimized for successful integration in the interconnect structure of 45 nm ULSI chip.