W
W. Rosner
Researcher at Siemens
Publications - 22
Citations - 268
W. Rosner is an academic researcher from Siemens. The author has contributed to research in topics: Transistor & Etching (microfabrication). The author has an hindex of 8, co-authored 22 publications receiving 267 citations.
Papers
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Vertical MOS transistors with 70 nm channel length
TL;DR: In this article, vertical nMOS transistors with channel lengths down to 70 nm and thin gate oxides have been fabricated using LPCVD epitaxy for the definition of the channel region instead of fine line lithography.
Patent
Read-only-memory cell arrangement using vertical MOS transistors and gate dielectrics of different thicknesses and method for its production
TL;DR: A read-only-memory cell arrangement comprises memory cells, each having a vertical MOS transistor, in a substrate (21) made of semiconductor material, the various logic values (zero, one) being implemented by gate dielectrics of different thickness as mentioned in this paper.
Patent
Festwert-speicherzellenanordnung und verfahren zu deren herstellung
TL;DR: In this article, a Festwert-Speicherzellenanordnung and eine Ansteuerschaltung zum Auslesen konnen dabei integriert hergestellt werden.
Patent
Method for producing an opening in a layered semiconductor structure or a contact hole in an integrated circuit or DRAM
TL;DR: In this article, a place-saver is produced on the structure from a first material to be selectively etched to the structure under the first material and to a material adjacent the site.
Patent
Method for production of a read-only-memory cell arrangement having vertical MOS transistors
TL;DR: In this paper, a read-only-memory cell arrangement with vertical MOS transistors is described, where holes provided with a gate dielectric and a gate electrode are etched in a silicon substrate with a layer sequencing corresponding to a source, a channel and a drain for the first memory cells.