W
W. Saitoh
Researcher at Tokyo Institute of Technology
Publications - 19
Citations - 177
W. Saitoh is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Quantum tunnelling & Transistor. The author has an hindex of 6, co-authored 19 publications receiving 175 citations.
Papers
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Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate
TL;DR: In this paper, very short channel n- and p-type Schottky source/drain MOSFETs with silicon-on-insulator (SOI) structure were analyzed theoretically, and n-type devices were demonstrated experimentally.
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35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate
TL;DR: P-type metal oxide semiconductor field-effect transistors with PtSi Schottky sources/drains with a 35-nm long metal gate were fabricated on a separation by implanted oxygen substrate by electron-beam lithography and a self-aligned silicide process as mentioned in this paper.
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Theoretical analysis and fabrication of small area metal/insulator resonant tunneling diode integrated with patch antenna for terahertz photon assisted tunneling
TL;DR: In this paper, a small-area resonant tunneling diode with a circular patch antenna is proposed for photon assisted tunneling, and the estimated voltage in this integrated device together with an appropriate lens system is comparable to the THz photon energy under relatively low power radiation (∼100mW).
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Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy
TL;DR: In this article, a technique for growing a multilayered superlattice consisting of several monolayers of CaF 2 /CdF 2 on a Si(111) substrate using a partially ionized beam technique at 50°C was proposed.
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Theoretical and measured characteristics of metal (CoSi/sub 2/)-insulator(CaF/sub 2/) resonant tunneling transistors and the influence of parasitic elements
TL;DR: In this paper, the authors report on the theoretical and measured characteristics of triple-barrier metal (CoSi/sub 2/)-insulator (CaF /sub 2/) resonant tunneling transistors (RTT) grown on an n-Si(111) substrate, and the influence of their parasitic elements on the measured characteristics.