A
Atsushi Itoh
Researcher at Tokyo Institute of Technology
Publications - 8
Citations - 245
Atsushi Itoh is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Schottky diode & Field-effect transistor. The author has an hindex of 6, co-authored 8 publications receiving 234 citations.
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Journal ArticleDOI
Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate
TL;DR: In this paper, very short channel n- and p-type Schottky source/drain MOSFETs with silicon-on-insulator (SOI) structure were analyzed theoretically, and n-type devices were demonstrated experimentally.
Journal ArticleDOI
Twofold Spontaneous Symmetry Breaking in the Heavy-Fermion Superconductor UPt 3
Yo Machida,Atsushi Itoh,Y. So,Koichi Izawa,Yoshinori Haga,E. Yamamoto,Noriaki Kimura,Yoshichika Onuki,Yoshichika Onuki,Yasumasa Tsutsumi,Kazushige Machida +10 more
TL;DR: The gap function of UPt3 is determined as a E(1u) representation characterized by a combination of two line node at the tropics and point nodes at the poles, a clear indication of a change of gap symmetries.
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A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transistor on Separation-by-Implanted-Oxygen Substrate
TL;DR: A 25nm-long channel metal-gate PtSi Schottky source/drain MOSFET fabricated on a separation-by-implanted-oxygen (SIMOX) substrate was demonstrated in this article.
Journal ArticleDOI
Pairing Symmetry of UPt3 Probed by Thermal Transport Tensors
Koichi Izawa,Yo Machida,Atsushi Itoh,Yoshitaka So,Katsuya Ota,Yoshinori Haga,Etsuji Yamamoto,Noriaki Kimura,Y. Onuki,Y. Onuki,Yasumasa Tsutsumi,Kazushige Machida +11 more
TL;DR: In this article, the gap symmetry of UPt3 was analyzed by thermal conductivity tensors and it was shown that the pairing symmetry belongs to an E1u representation in the f-wave category.
Journal ArticleDOI
35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate
TL;DR: P-type metal oxide semiconductor field-effect transistors with PtSi Schottky sources/drains with a 35-nm long metal gate were fabricated on a separation by implanted oxygen substrate by electron-beam lithography and a self-aligned silicide process as mentioned in this paper.