Warren B. Jackson

TL;DR: In this article, the effects and kinetics of hydrogen passivation on polycrystalline-silicon thin-film transistors (poly-TFTs) are investigated.

TL;DR: In this paper, optical absorption measurements on fine-grain polycrystalline-silicon thin films indicate that the singly occupied dangling silicon bond lies 0.65±0.15 eV below the conduction band minimum in the grain boundary.

TL;DR: The kinetics (time, temperature, bias, and doping dependence) of these defects as well as most other metastable-defect processes are quantitatively explained by hydrogen diffusion and the creation of defects due to the presence of excess band-tail carriers.

TL;DR: In this paper, an electronic device including a substantially intrinsic non-single crystal semiconductor active layer having a number of metastable defects therein, the active layer being responsive to the application of stress upon the device by shifting its Fermi level from an equilibrium state within its mobility gap, and the spontaneous creation of a surplus number of defects in the mobility gap located in opposition to the shift in the FermI level, and a recovery layer comprising a doped NSS semiconductor layer positioned in proximity to active layer, for allowing the excess charge to spill over to the active

TL;DR: In this paper, the authors developed a highly accurate compact dynamical model for their electrical conduction that showed that the negative differential resistance in these devices results from a thermal feedback mechanism, which can be minimized by thermally isolating the selector or by incorporating materials with larger activation energies for electron motion.