Warren B. Jackson

TL;DR: In this article, the effect of the microscopic structure of polycrystalline silicon on hydrogen transport was investigated by H and D diffusion experiments, and it was shown that poly-Si composed of columnar grains and grown by low pressure chemical vapor deposition (LPCVD-grown) exhibits enhanced diffusion compared to solid-state crystallized (SSC) polypoly-Si.

TL;DR: In this paper, the effect of prolonged mechanical strain on the electrical characteristics of thin-film transistors of hydrogenated amorphous silicon made at a process temperature of 150oC on 51-µm thick Kapton polyimide foil substrates was studied.

TL;DR: In this paper, the defect densities in the annealed state, after illumination and after deuteration were determined using CPM measurements following each exposure sequence, and it was shown that an increase of the concentration of Si-H bonds by as much as 3 × 1021cm−3 changes neither the defect density, the weak Si-Si bond density nor the defect metastability.

TL;DR: In this paper, a transition metal oxides (TMO) based high-performance flexible electronic materials system is presented, which can be used to drive organic light-emitting diodes (OLEDs) as well as create electronic circuits, such as shift registers, ring oscillators, and multiplexers on chip.

TL;DR: In this article, self-aligned imprint lithography (SAIL) was used to pattern amorphous silicon and amorphized multicomponent oxide (MCO) transistors on flexible substrates.