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Wei-Chih Lai
Researcher at National Cheng Kung University
Publications - 195
Citations - 4533
Wei-Chih Lai is an academic researcher from National Cheng Kung University. The author has contributed to research in topics: Light-emitting diode & Gallium nitride. The author has an hindex of 33, co-authored 191 publications receiving 4301 citations. Previous affiliations of Wei-Chih Lai include National Chiao Tung University.
Papers
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Journal ArticleDOI
White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors
Jinn-Kong Sheu,Shoou-Jinn Chang,Cheng-Huang Kuo,Yan-Kuin Su,L.W. Wu,Y.C. Lin,Wei-Chih Lai,J.M. Tsai,Gou-Chung Chi,R.K. Wu +9 more
TL;DR: In this article, the color temperature T/sub c/ was around 5900 K and the color rendering index R/sub a/ was about 75 for the "n-UV+blue/green/red" white LED lamps.
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InGaN-GaN multiquantum-well blue and green light-emitting diodes
TL;DR: In this paper, the InGaN-GaN multiquantum-well (MQW) blue and green light-emitting diodes (LEDs) were prepared by organometallic vapor phase epitaxy, and the properties of these LEDs were evaluated by photoluminescence (PL), double crystal X-ray diffraction, and electroluminecence (EL) measurements.
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400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
Shoou-Jinn Chang,Cheng-Huang Kuo,Yan-Kuin Su,L.W. Wu,Jinn-Kong Sheu,Ten-Chin Wen,Wei-Chih Lai,J.R. Chen,J.M. Tsai +8 more
TL;DR: In this article, the 400-nm In/sub 0.95/N-GaN MQW light-emitting diode (LED) structure was compared with the AlGaN barrier layers for barrier layers in the InGaN-AlGaN multiquantum well (MQW) LED.
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Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes
L.W. Wu,Shoou-Jinn Chang,Ten-Chin Wen,Yan-Kuin Su,Jone-Fang Chen,Wei-Chih Lai,Cheng-Huang Kuo,C.H. Chen,Jinn-Kong Sheu +8 more
TL;DR: In this article, a detailed study on the effects of Si-doping in the GaN barrier layers of InGaN-GaN multiquantum well (MQW) light-emitting diodes (LEDs) has been performed.
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Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer
Jinn-Kong Sheu,J.M. Tsai,Shei Shih-Chang,Wei-Chih Lai,Ten-Chin Wen,C.H. Kou,Yan-Kuin Su,Shoou-Jinn Chang,G.C. Chi +8 more
TL;DR: In this article, a Si-doped In/sub 0.23/N/GaN short-period superlattice (SPS) tunneling contact was grown by metalorganic vapor phase epitaxy.