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Gou-Chung Chi

Researcher at National Central University

Publications -  197
Citations -  4734

Gou-Chung Chi is an academic researcher from National Central University. The author has contributed to research in topics: Light-emitting diode & Metalorganic vapour phase epitaxy. The author has an hindex of 35, co-authored 197 publications receiving 4604 citations. Previous affiliations of Gou-Chung Chi include Chung Yuan Christian University & Bell Labs.

Papers
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White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

TL;DR: In this article, the color temperature T/sub c/ was around 5900 K and the color rendering index R/sub a/ was about 75 for the "n-UV+blue/green/red" white LED lamps.
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High-transparency Ni/Au ohmic contact to p-type GaN

TL;DR: In this article, a very thin Ni/Au bilayer metal film was prepared by electron beam evaporation and thermal alloying to form ohmic contact on p-type GaN film.
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Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

TL;DR: In this paper, the thermal stability of indium tin oxide (ITO) on n-type GaN was investigated by annealing the samples at various temperatures, and currentvoltage measurements were taken to deduce the Schottky barrier heights.
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GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

TL;DR: In this article, a GaN-based metal-semiconductor-metal (MSM) photodetector with ITO transparent contacts was fabricated and a maximum 0.12-A photocurrent with a photocurrent to dark current contrast higher than five orders of magnitude during ultraviolet irradiation was obtained.
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Electroluminescence from ZnO nanowire/polymer composite p-n junction

TL;DR: The characteristics of a hybrid p-n junction consisting of the holeconducting polymer poly(3,4-ethylene-dioxythiophene)-poly(styrene-sulfonate) (PEDOT/PSS) and n-ZnO nanorods grown on an n-GaN layer on sapphire are reported in this article.