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Shoou-Jinn Chang
Researcher at National Cheng Kung University
Publications - 1035
Citations - 19229
Shoou-Jinn Chang is an academic researcher from National Cheng Kung University. The author has contributed to research in topics: Light-emitting diode & Gallium nitride. The author has an hindex of 60, co-authored 1022 publications receiving 17946 citations. Previous affiliations of Shoou-Jinn Chang include National Central University & Cheng Shiu University.
Papers
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Journal ArticleDOI
White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors
Jinn-Kong Sheu,Shoou-Jinn Chang,Cheng-Huang Kuo,Yan-Kuin Su,L.W. Wu,Y.C. Lin,Wei-Chih Lai,J.M. Tsai,Gou-Chung Chi,R.K. Wu +9 more
TL;DR: In this article, the color temperature T/sub c/ was around 5900 K and the color rendering index R/sub a/ was about 75 for the "n-UV+blue/green/red" white LED lamps.
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Laterally grown ZnO nanowire ethanol gas sensors
TL;DR: In this article, the growth direction of ZnO nanowires depends strongly on growth parameters and resistivity of the fabricated sensor decreased upon ethanol gas injection, and it was found that the device response were around 20, 35, 58%, 58% and 61% when the gas sensor was operated at 180,°C, 230,°c, 260 ¼ c, and 300 ¼c, respectively.
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InGaN-GaN multiquantum-well blue and green light-emitting diodes
TL;DR: In this paper, the InGaN-GaN multiquantum-well (MQW) blue and green light-emitting diodes (LEDs) were prepared by organometallic vapor phase epitaxy, and the properties of these LEDs were evaluated by photoluminescence (PL), double crystal X-ray diffraction, and electroluminecence (EL) measurements.
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Band Gap Engineering of Chemical Vapor Deposited Graphene by in Situ BN Doping
Cheng Kai Chang,Cheng Kai Chang,Satender Kataria,Satender Kataria,Chun Chiang Kuo,Abhijit Ganguly,Bo-Yao Wang,Bo-Yao Wang,Jeong Yuan Hwang,Kay Jay Huang,Wei Hsun Yang,S. B. Wang,Cheng Hao Chuang,Cheng Hao Chuang,Mi Chen,Ching-I Huang,Way-Faung Pong,Ker Jar Song,Shoou-Jinn Chang,Jinghua Guo,Yian Tai,Masahiko Tsujimoto,Seiji Isoda,Chun-Wei Chen,Li-Chyong Chen,Kuei-Hsien Chen,Kuei-Hsien Chen +26 more
TL;DR: A significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π-π* band gap of graphene due to isoelectronic BN doping.
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400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
Shoou-Jinn Chang,Cheng-Huang Kuo,Yan-Kuin Su,L.W. Wu,Jinn-Kong Sheu,Ten-Chin Wen,Wei-Chih Lai,J.R. Chen,J.M. Tsai +8 more
TL;DR: In this article, the 400-nm In/sub 0.95/N-GaN MQW light-emitting diode (LED) structure was compared with the AlGaN barrier layers for barrier layers in the InGaN-AlGaN multiquantum well (MQW) LED.