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Wei Ji

Researcher at Renmin University of China

Publications -  666
Citations -  26973

Wei Ji is an academic researcher from Renmin University of China. The author has contributed to research in topics: Medicine & Monolayer. The author has an hindex of 64, co-authored 550 publications receiving 20154 citations. Previous affiliations of Wei Ji include East China University of Science and Technology & Huazhong Agricultural University.

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Mounting and removing device and method for core of turbo expander

TL;DR: In this article, the core of a turbo expander is mounted in a shell, and a supporting base is fixed on the shell, a threaded cover fixed on a core, a protection barrel body arranged on the supporting base and a screw rod which penetrates through the barrel body and is fixedly supported by the threaded cover.
Proceedings ArticleDOI

Study on the selection method of solid cold energy storage medium for liquid air energy storage

TL;DR: In this paper , a packed bed cryogenic regenerator was investigated for cold energy storage in the liquid air energy storage (LAES) system, and sensitivity analyses of the specific heat capacity and thermal conductivity were carried out.
Journal ArticleDOI

High heterogeneous compatibility of HfB2-SiC ceramic and Zr-4 alloy with in-situ assembled interface

TL;DR: In this paper , the authors demonstrated the high compatibility of the two heterogeneous materials even at 1400 °C, and the formation of an in-situ assembled triple diffusion layer with stable phases and dense structures largely improved the interface compatibility.

Technical and economic evaluation of a liquid air energy storage system with air precooling for compressor inlet

TL;DR: In this paper , the compressor inlet air is cooled by absorption refrigeration cycle to avoid excess compression heat, which reduces the power consumption of the compressor and improves the efficiency of the system.
Journal ArticleDOI

InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure

TL;DR: In this paper , an n-GaAsSb single waveguide layer semiconductor laser with an InP/In0.55Ga0.45As/AlGaAs asymmetric barrier is designed to improve output power, which not only reduces optical loss in the p-region but also effectively suppresses carrier leakage.