Will Conley

TL;DR: The history and chemistry of negative-resist systems and their development in IBM are provided and materials with wide processing latitude and high resolution are provided that are used to manufacture IBM's advanced CMOS devices and to achieve high-aspect-ratio patterns for micromachining applications.

TL;DR: In this paper, a variety of novel norbornenes that can be polymerized by metal catalyzed addition polymerization to give etch resistant polymer platforms with greatly improved transparency at 157nm and led to the study of acrylic copolymers derived from 2-(trifluoromethyl)acrylic acid.

TL;DR: In this paper, metal-catalyzed vinyl addition copolymers derived from partially fluorinated norbornenes and tricyclononenes were synthesized and evaluated for use in formulating photoresists for 157 nm lithography imaging.

TL;DR: Fluorinated tricyclonononene (TCN) structures with ester substituents exhibit up to 3 orders of magnitude more transparency at 157 nm than conventional ester-functionalized norbornene structures as determined by gas-phase vacuum-ultraviolet spectroscopy and variable angle spectroscopic ellipsometry as mentioned in this paper.

TL;DR: In this article, the design of photoresist matrix resin polymers is broken down into subunits, each of which is responsible for a required function in the final material, and the authors have begun collecting gas-phase VUV spectra of these potential subunits to measure their individual absorbance contributions.