Microfluidic devices are finding increasing application as analytical systems, biomedical devices, tools for chemistry and biochemistry, and systems for fundamental research. Conventional methods of fabricating microfluidic devices have centered on etching in glass and silicon. Fabrication of microfluidic devices in poly(dimethylsiloxane) (PDMS) by soft lithography provides faster, less expensive routes than these conventional methods to devices that handle aqueous solutions. These soft-lithographic methods are based on rapid prototyping and replica molding and are more accessible to chemists and biologists working under benchtop conditions than are the microelectronics-derived methods because, in soft lithography, devices do not need to be fabricated in a cleanroom. This paper describes devices fabricated in PDMS for separations, patterning of biological and nonbiological material, and components for integrated systems.

Fabrication of microfluidic systems in poly(dimethylsiloxane)

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

The term 'photonics' describes a technology whereby data transmission and processing occurs largely or entirely by means of photons. Photonic crystals are microstructured materials in which the dielectric constant is periodically modulated on a length scale comparable to the desired wavelength of operation. Multiple interference between waves scattered from each unit cell of the structure may open a 'photonic bandgap'--a range of frequencies, analogous to the electronic bandgap of a semiconductor, within which no propagating electromagnetic modes exist. Numerous device principles that exploit this property have been identified. Considerable progress has now been made in constructing two-dimensional structures using conventional lithography, but the fabrication of three-dimensional photonic crystal structures for the visible spectrum remains a considerable challenge. Here we describe a technique--three-dimensional holographic lithography--that is well suited to the production of three-dimensional structures with sub-micrometre periodicity. With this technique we have made microperiodic polymeric structures, and we have used these as templates to create complementary structures with higher refractive-index contrast.

Fabrication of photonic crystals for the visible spectrum by holographic lithography

Progress in preparation, processing and applications of polyaniline

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

This article describes a new negative‐tone photoresist, SU‐8, for ultrathick layer applications. An aspect ratio of 10:1 has been achieved using near‐ultraviolet lithography in a 200‐μm‐thick layer. The use of this resist for building tall micromechanical structures by deep silicon reactive‐ion etching and electroplating is demonstrated. Using SU‐8 stencils, etched depths of ≳200 μm in Si and electroplated 130‐μm‐thick Au structures with near‐vertical sidewalls have been achieved.

Micromachining applications of a high resolution ultrathick photoresist

Negative photoresists are materials that become insoluble in developing solutions when exposed to optical radiation. They were the first systems used to pattern semiconductor devices, and still comprise the largest segment of the photoresist industry because they are widely used to define the circuitry in printed wiring boards. However, the current use of negative resists in the semiconductor industry has been limited by past difficulties in achieving high-resolution patterns. Recent advances in the chemistry of negative-resist systems, however, have provided materials with wide processing latitude and high resolution that are used to manufacture IBM's advanced CMOS devices and to achieve high-aspect-ratio patterns for micromachining applications. This paper provides an overview of the history and chemistry of negative-resist systems and their development in IBM.

Negative photoresists for optical lithography

This paper describes a practical implementation of a single-phase Si microchannel cooler designed for cooling very high power chips such as microprocessors. Through the use of multiple heat exchanger zones and optimized cooler fin designs, a unit thermal resistance 10.5 C-mm2 /W from the cooler surface to the inlet water was demonstrated with a fluid pressure drop of <35kPa. Further, cooling of a thermal test chip with a microchannel cooler bonded to it packaged in a single chip module was also demonstrated for a chip power density greater than 300W/cm2. Coolers of this design should be able to cool chips with average power densities of 400W/cm2 or more

A Practical Implementation of Silicon Microchannel Coolers for High Power Chips

The paper describes a practical implementation of a single-phase Si microchannel cooler designed for cooling very high power chips such as microprocessors. Through the use of multiple heat exchanger zones and optimized cooler fin designs, a unit thermal resistance of 10.5 C-mm/sup 2//W from the cooler surface to the inlet water was demonstrated with a fluid pressure drop of less than 35 kPa. Further, cooling of a thermal test chip with a microchannel cooler bonded to it packaged in a single chip module was also demonstrated for a chip power density greater than 300 W/cm/sup 2/. Coolers of this design should be able to cool chips with average power densities of 400 W/cm/sup 2/ or more.

A practical implementation of silicon microchannel coolers for high power chips

In recent years, increased activity in micromachining has driven the need for high aspect ratio thick films resist systems. This paper discusses a new epoxy based resist that can be used to achieve high aspect ratios (> 10:1) using UV lithography. The resulting negative resist system provides sharp, clean images in thick films (> 200 micrometers ). Because of the high aspect ratio and short exposure times, this material may be a viable candidate for producing the images required for micromachined parts. The resist images exhibit straight sidewalls and developed patterns, have excellent thermal stability, good adhesion, and chemical resistance. The high aspect ratio and high thermal stability make these epoxy resists suitable for other packaging applications such as plating stencils and optical wave guides.© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Nancy C. LaBianca

Papers

Micromachining applications of a high resolution ultrathick photoresist

Negative photoresists for optical lithography

A Practical Implementation of Silicon Microchannel Coolers for High Power Chips

A practical implementation of silicon microchannel coolers for high power chips

High-aspect-ratio resist for thick-film applications