William B. Kuhn

TL;DR: In this paper, current crowding is studied through approximate analytical modeling, and first-order expressions are derived for predicting resistance as a function of frequency, which is validated through comparisons with electromagnetic simulations and compared with measured data taken from a spiral inductor implemented in a silicon-on-sapphire process.

TL;DR: In this paper, the authors present design techniques and performance bounds for implementing Q-enhanced, LC bandpass filters in silicon IC technologies, which offer significant advantages over switched capacitor and Gm-C based designs, including higher frequency of operation and lower power consumption.

TL;DR: In this article, a fully integrated 850 MHz, two-pole, bandpass filter with an 18 MHz 3 dB bandwidth is reported. And the prototype design is implemented in a standard 0.8 /spl mu/m CMOS process and achieves a rejection of over 50 dB at 100 MHz offset, an in-band dynamic range of 75 (90) dB when used in a system with a 1 MHz (30 kHz) final IF bandwidth, and a third-order intercept point that exceeds +25 dBm at an 80 MHz offset from the passband center.

TL;DR: In this article, a low power and high performance design targeted at Bluetooth in a silicon-on-isolator (SOI) CMOS process is presented, which achieves 23dB voltage gain (14-dB power gain), approximately 6dB noise figure, and a 153dB/spl middot/Hz 1-dB compression point dynamic range, when operating with a 70MHz bandwidth at 2.5 GHz.

TL;DR: In this article, a 900-MHz Q-enhanced filter with a 20-MHz bandwidth is reported that achieves 78dB DR in a 1-MHz frequency bandpass filter while consuming 39 mW.