Journal ArticleDOI
Analysis of current crowding effects in multiturn spiral inductors
William B. Kuhn,N.M. Ibrahim +1 more
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In this paper, current crowding is studied through approximate analytical modeling, and first-order expressions are derived for predicting resistance as a function of frequency, which is validated through comparisons with electromagnetic simulations and compared with measured data taken from a spiral inductor implemented in a silicon-on-sapphire process.Abstract:
The effective trace resistance of a multiturn spiral inductor operating at high frequencies is known to increase dramatically above its dc value, due to proximity effect or current crowding. This phenomenon, which dominates resistance increases due to skin effect, is difficult to analyze precisely and has generally required electromagnetic simulation for quantitative assessment. Current crowding is studied in this paper through approximate analytical modeling, and first-order expressions are derived for predicting resistance as a function of frequency. The results are validated through comparisons with electromagnetic simulations and compared with measured data taken from a spiral inductor implemented in a silicon-on-sapphire process.read more
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Lumped Elements for RF and Microwave Circuits
TL;DR: In this paper, the authors present a comprehensive treatment of lumped elements, which are playing a critical role in the development of the circuits that make these cost-effective systems possible, including inductors, capacitors, resistors, transformers, via holes, airbridges, and crossovers.
Journal ArticleDOI
Frequency-independent equivalent-circuit model for on-chip spiral inductors
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TL;DR: In this article, a wideband physical and scalable 2-spl Pi/ equivalent circuit model for on-chip spiral inductors is developed based on physical derivation and circuit theory, closed-form formulas are generated to calculate the RLC circuit elements directly from the inductor layout.
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On the design of RF spiral inductors on silicon
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Proceedings ArticleDOI
Frequency-independent equivalent circuit model for on-chip spiral inductors
Yu Cao,Robert A. Groves,N.D. Zamdmer,Jean-Olivier Plouchart,R.A. Wachnik,Xuejue Huang,Tsu-Jae King,Chenming Hu +7 more
TL;DR: In this paper, a wideband, physical and scalable 2/spl Pi/ equivalent circuit model for on-chip spiral inductors is developed using frequency-independent RLC elements.
References
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Journal ArticleDOI
On-chip spiral inductors with patterned ground shields for Si-based RF ICs
Chik Patrick Yue,S. Simon Wong +1 more
TL;DR: In this paper, a patterned ground shield is inserted between an on-chip spiral inductor and silicon substrate to increase the quality of a 2 GHz LC tank by up to 33% and reduce substrate coupling between two adjacent inductors.
Journal ArticleDOI
Analysis, design, and optimization of spiral inductors and transformers for Si RF ICs
Ali M. Niknejad,Robert G. Meyer +1 more
TL;DR: In this article, the authors used classic circuit analysis and network analysis techniques to derive two-port parameters from spiral inductors and transformers and applied them to traditional square and polygon inductors, as well as multilayer metal structures and coupled inductors.
Proceedings ArticleDOI
On-chip Spiral Inductors With Patterned Ground Shields For Si-based RF IC's
TL;DR: In this paper, a patterned ground shield is proposed to reduce the unwanted substrate effects by shielding the electric field of an on-chip spiral inductor from the silicon substrate, which can be realized in standard silicon technologies without additional processing steps.
Journal ArticleDOI
Large suspended inductors on silicon and their use in a 2- mu m CMOS RF amplifier
TL;DR: In this paper, large spiral inductors encased in oxide over silicon are shown to operate beyond the UHF band when the capacitance and loss resistance are greatly reduced by selective removal of the underlying substrate.
Journal ArticleDOI
A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductors
Jan Craninckx,Michiel Steyaert +1 more
TL;DR: In this article, a completely integrated 1.8 GHz low-phase-noise voltage-controlled oscillator (VCO) has been realized in a standard silicon digital CMOS process.
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