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William Weigand

Researcher at Arizona State University

Publications -  34
Citations -  1149

William Weigand is an academic researcher from Arizona State University. The author has contributed to research in topics: Amorphous silicon & Silicon. The author has an hindex of 8, co-authored 30 publications receiving 555 citations. Previous affiliations of William Weigand include University of San Diego.

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Triple-halide wide–band gap perovskites with suppressed phase segregation for efficient tandems

TL;DR: A method for incorporating chloride is reported that allows for fabrication of stable triple-halide perovskites with a band gap of 1.67 electron volts and a factor of 2 increase in photocarrier lifetime and charge-carrier mobility that resulted from enhancing the solubility of chlorine by replacing some of the iodine with bromine to shrink the lattice parameter.
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Blade-Coated Perovskites on Textured Silicon for 26%-Efficient Monolithic Perovskite/Silicon Tandem Solar Cells

TL;DR: In this article, a solution-based blading of perovskites onto silicon wafers textured with pyramids less than 1μm in height is proposed, which is rough enough to scatter light within the silicon nearly as efficiently as large pyramids but smooth enough to solution-process a perovskiite film.
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Active microrheology determines scale-dependent material properties of Chaetopterus mucus.

TL;DR: The results suggest that, rather than a single lengthscale governing crossover from viscous to elastic, mucus responds as a hierarchical network with a loose biopolymer mesh coupled to a larger scaffold responsible for macroscopic gel-like mechanics.
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Current-Matched III–V/Si Epitaxial Tandem Solar Cells with 25.0% Efficiency

TL;DR: In this paper, the authors show that heterointerface design and growth sequence also play critical roles in reducing recombination losses in III-V/Si epitaxial tandems with a 1.7-eV GaAsP top cell.
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20%-efficient epitaxial GaAsP/Si tandem solar cells

TL;DR: In this article, the authors presented epitaxial 1.7eV/1.1eV GaAs0.75P0.25/Si tandem cells with an NREL-certified efficiency of 20.0%, enabled by a thermally stable tunnel junction interconnect along with a hydrogenated amorphous Si (a-Si:H) carrier-selective contact for the Si bottom cell.