The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

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A comprehensive review of zno materials and devices

The synthesis of epitaxially grown, wurtzite CdSe/CdS core/shell nanocrystals is reported Shells of up to three monolayers in thickness were grown on cores ranging in diameter from 23 to 39 A Shell growth was controllable to within a tenth of a monolayer and was consistently accompanied by a red shift of the absorption spectrum, an increase of the room temperature photoluminescence quantum yield (up to at least 50%), and an increase in the photostability Shell growth was shown to be uniform and epitaxial by the use of X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), and optical spectroscopy The experimental results indicate that in the excited state the hole is confined to the core and the electron is delocalized throughout the entire structure The photostability can be explained by the confinement of the hole, while the delocalization of the electron results in a degree of electronic accessibility that makes these nanocrystals

Epitaxial Growth of Highly Luminescent CdSe/CdS Core/Shell Nanocrystals with Photostability and Electronic Accessibility

Wurtzitic ZnO is a wide-bandgap (3.437 eV at 2 K) semiconductor which has many applications, such as piezoelectric transducers, varistors, phosphors, and transparent conducting films. Most of these applications require only polycrystalline material; however, recent successes in producing large-area single crystals have opened up the possibility of producing blue and UV light emitters, and high-temperature, high-power transistors. The main advantages of ZnO as a light emitter are its large exciton binding energy (60 meV), and the existence of well-developed bulk and epitaxial growth processes; for electronic applications, its attractiveness lies in having high breakdown strength and high saturation velocity. Optical UV lasing, at both low and high temperatures, has already been demonstrated, although efficient electrical lasing must await the further development of good, p-type material. ZnO is also much more resistant to radiation damage than are other common semiconductor materials, such as Si, GaAs, CdS, and even GaN; thus, it should be useful for space applications.

Recent Advances in ZnO Materials and Devices

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The p...

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Luminescence properties of defects in GaN

Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures and devices. The chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices. The development of growth methods like metalorganic chemical vapour deposition and plasma-induced molecular beam epitaxy has resulted in remarkable improvements in the structural, optical and electrical properties. New developments in precursor chemistry, plasma-based nitrogen sources, substrates, the growth of nucleation layers and selective growth are covered. Deposition conditions and methods used to grow alloys for optical bandgap and lattice engineering are introduced. The review is concluded with a description of recent Group III-nitride semiconductor devices such as bright blue and white light-emitting diodes, the first blue-emitting laser, high-power transistors, and a discussion of further applications in surface acoustic wave devices and sensors.

https://iopscience.iop.org/article/10.1088/0022-3727/31/20/001/pdf

Growth and applications of Group III-nitrides

Highly conductive polycrystalline ZnO films have been grown by metal organic chemical vapour deposition (MOCVD) using dimethylzinc (DMZn), dimethylzinc-triethylamine (DMZn-TEN) and tertiary butanol (tBuOH) as precursors. When (DMZn-TEN) is used the efficiency of the zinc precursors is reduced by the formation of gas-phase adducts. Films grown by DMZn-TEN are oriented with the c axis in the growth direction. The films are transparent. Specific resistivities as low as and Hall mobilities up to have been achieved in n-doped films where n-butylchloride and triethylgallium have been used as dopant sources.

https://iopscience.iop.org/article/10.1088/0268-1242/13/7/022/pdf

MOCVD layer growth of ZnO using DMZn and tertiary butanol

Digital analysis of high resolution transmission electron microscopy lattice images

Photoluminescence properties of MOVPE grown ZnTe layers on (100) GaAs and (100) GaSb

Transmission electron microscopy (TEM) investigations of metal organic vapor phase deposition grown AlxGa1−xN/GaN heterostructures on Si(111) containing an AlN high-temperature buffer layer have been carried out. The structural properties at the interface and in the epilayer as well as the electronic properties suitable for a high electron mobility transistor (HEMT) were analyzed and compared with systems grown on Al2O3(0001). High resolution TEM (HRTEM) at the AlN/Si(111) interface reveals a 1.5–2.7 nm thick amorphous SiNx layer due to the high growth temperature of TAlN=1040 °C. Therefore, a grain-like GaN/AlN region extending 40–60 nm appears and it is subsequently overgrown with (0001) orientated GaN material because of geometrical selection. The residual strain at the AlN/Si(111) interface is estimated to be er=0.3±0.6% by Fourier filtering of HRTEM images and a moire fringe analysis. This indicates almost complete relaxation of the large mismatch f(AlN/Si)=+23.4% which seems to be supported by the S...

Wolfgang Gebhardt

Papers

MOCVD layer growth of ZnO using DMZn and tertiary butanol

Digital analysis of high resolution transmission electron microscopy lattice images

Photoluminescence properties of MOVPE grown ZnTe layers on (100) GaAs and (100) GaSb

Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors

Gap Energies, Exciton Binding Energies and Band Offsets in Ternary ZnMgSe Compounds and ZnSe/ZnMgSe Heterostructures