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Woong Choi

Researcher at Kookmin University

Publications -  85
Citations -  5126

Woong Choi is an academic researcher from Kookmin University. The author has contributed to research in topics: Thin-film transistor & Thin film. The author has an hindex of 25, co-authored 80 publications receiving 4533 citations. Previous affiliations of Woong Choi include Applied Materials & Samsung.

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ITO-free inverted polymer solar cells using a GZO cathode modified by ZnO

TL;DR: A gallium-doped ZnO (GZO) layer was investigated and compared with a conventional ITO layer for use as a cathode in an inverted polymer solar cell based on poly(3-hexylthiophene) (P3HT):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) bulk heterojunctions as mentioned in this paper.
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Selective and localized laser annealing effect for high-performance flexible multilayer MoS2 thin-film transistors

TL;DR: In this paper, the authors used ultra-short, pulsed-laser annealed Ti/Au contacts to enhance the performance of multilayer MoS2 field effect transistors (FETs) on flexible plastic substrates without thermal damage.
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Control of naturally coupled piezoelectric and photovoltaic properties for multi-type energy scavengers

TL;DR: In this article, a simple, low-cost and flexible hybrid cell that converts individually or simultaneously low-frequency mechanical energy and photon energy into electricity using piezoelectric zinc oxide (ZnO) in conjunction with organic solar cell design is presented.
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Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors

TL;DR: In this article, the authors investigated the dependence of electron mobility on the thickness of MoS2 nanosheets by fabricating bottom-gate single and few-layer thin-film transistors with SiO2 gate dielectrics and Au electrodes.
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Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation

TL;DR: In this article, the effect of Al2O3 encapsulation on the carrier mobility and contact resistance of multilayer MoS2 thin-film transistors was investigated by statistically investigating 70 devices with SiO2 bottomgate dielectric.