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Xi Yao

Researcher at Xi'an Jiaotong University

Publications -  466
Citations -  8363

Xi Yao is an academic researcher from Xi'an Jiaotong University. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 42, co-authored 460 publications receiving 7632 citations. Previous affiliations of Xi Yao include Nanyang Technological University & National Institute of Advanced Industrial Science and Technology.

Papers
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Microwave Dielectric Properties of Li2WO4 Ceramic with Ultra-Low Sintering Temperature

TL;DR: Li2WO4 with the phenacite structure has been shown to be chemically compatible with both silver and aluminum powders at 640°C and 660°C, respectively.
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Band-gap energies of sol-gel-derived SrTiO3 thin films

TL;DR: In this paper, the band-gap energies of sol-gel-derived SrTiO3 thin films were studied in terms of annealing temperature and film thickness, and it was shown that the band gap energy shift was mainly due to both quantum size effect and existence of amorphous phase in thin films.
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Novel temperature stable high-εr microwave dielectrics in the Bi2O3–TiO2–V2O5 system

TL;DR: In this paper, a series of low temperature firing (1 − x)BiVO4-xTiO2 (x = 0.4, 0.50,0.55 and 0.60) microwave dielectric ceramics was prepared using traditional solid state reaction method.
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Symmetry of flexoelectric coefficients in crystalline medium

TL;DR: In this article, the symmetry of the flexoelectric coefficients in matrix form is studied and the results indicate that the direct flexoeectric coefficients should be presented in 3'×'18' form and the converse flexoeffectric coefficients are presented in 6'×'-9' form, rather than 6'x'-6'6' form like elastic constants.
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Influence of Ce substitution for Bi in BiVO4 and the impact on the phase evolution and microwave dielectric properties.

TL;DR: In the present work, the (Bi1-xCex)VO4 ceramics were prepared via a solid-state reaction method and all the ceramic samples could be densified below 900 °C and infrared spectral analysis supported that the dielectric contribution for this system at microwave region could be attributed to the absorptions of structural phonon oscillations.