X
Xiao Huang
Researcher at Nanjing Tech University
Publications - 143
Citations - 28037
Xiao Huang is an academic researcher from Nanjing Tech University. The author has contributed to research in topics: Graphene & Chemistry. The author has an hindex of 55, co-authored 123 publications receiving 24308 citations. Previous affiliations of Xiao Huang include Nanyang Technological University & Center for Advanced Materials.
Papers
More filters
Journal ArticleDOI
Graphene-based composites
TL;DR: A critical review of the synthesis methods for graphene and its derivatives as well as their properties and the advantages of graphene-based composites in applications such as the Li-ion batteries, supercapacitors, fuel cells, photovoltaic devices, photocatalysis, and Raman enhancement are described.
Journal ArticleDOI
Graphene-Based Materials: Synthesis, Characterization, Properties, and Applications
Xiao Huang,Zongyou Yin,Shixin Wu,Xiaoying Qi,Qiyuan He,Qichun Zhang,Qingyu Yan,Freddy Yin Chiang Boey,Hua Zhang +8 more
TL;DR: The synthesis, characterization, properties, and applications of graphene-based materials are discussed and the promising properties together with the ease of processibility and functionalization make graphene- based materials ideal candidates for incorporation into a variety of functional materials.
Journal ArticleDOI
Metal dichalcogenide nanosheets: preparation, properties and applications
TL;DR: This tutorial review will take MoS(2) as a typical example to introduce the latest research development of 2D inorganic nanomaterials with emphasis on their preparation methods, properties and applications.
Journal ArticleDOI
Single‐Layer Semiconducting Nanosheets: High‐Yield Preparation and Device Fabrication
Zhiyuan Zeng,Zongyou Yin,Xiao Huang,Hai Li,Qiyuan He,Gang Lu,Freddy Yin Chiang Boey,Hua Zhang +7 more
TL;DR: The common feature of these materials is that the bulk material forms are layeredstructures with strong covalent bonding in each layer and weak van der Waals forces between the layers.
Journal ArticleDOI
Fabrication of Single‐ and Multilayer MoS2 Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature
Hai Li,Zongyou Yin,Qiyuan He,Hong Li,Xiao Huang,Gang Lu,Derrick Wen Hui Fam,Alfred Iing Yoong Tok,Qing Zhang,Hua Zhang +9 more
TL;DR: Although the single-layer MoS(2) device shows a rapid response after exposure to NO, the current was found to be unstable, and these FET devices can be used as gas sensors to detect nitrous oxide.