Xiao-Li Li

TL;DR: In this article, the authors demonstrate the strategies and principles for the performance improvement of layered semiconductor based photodetectors using multilayer indium selenide (InSe) as the model material.

TL;DR: A significant intensity enhancement of the interlayer coupling modes (C peaks) due to resonance with new optically allowed electronic transitions, determined by the relative orientation of the layers is found.

TL;DR: In this article, the authors reviewed how optical properties of typical 2D materials (e.g., monolayer and multilayer graphenes, transition metal dichalcogenides) probed by these optical techniques significantly depend on the layer number (N).

TL;DR: The effect of relevant experimental parameters on the layer-number identification was discussed in detail, such as the thickness of the SiO2 layer, laser excitation wavelength and numerical aperture of the used objective, and paves the way to use Raman signals from dielectric substrates for layer- number identification of ultrathin flakes of various 2d materials.

TL;DR: In this article, the authors studied the shear (C) and layer-breathing (LB) modes of Mo 0.5W0.5S2 alloy flakes and their link to the layer number.