Yan Lu

TL;DR: The results provide a new route for modulating the optical properties of two-dimensional semiconductors and the strong and stable PL from defects sites of MoS2 may have promising applications in optoelectronic devices.

TL;DR: This work shows that ultralow-frequency Raman spectroscopy is an ideal tool to uncover the interface coupling of 2d hybrids and heterostructures by directly probing the interlayer interactions in multilayer samples.

TL;DR: The effect of relevant experimental parameters on the layer-number identification was discussed in detail, such as the thickness of the SiO2 layer, laser excitation wavelength and numerical aperture of the used objective, and paves the way to use Raman signals from dielectric substrates for layer- number identification of ultrathin flakes of various 2d materials.

TL;DR: In this paper, a simple, fast and nondestructive technique was demonstrated to precisely determine the layer number of SiO2 films on Si substrate only by optical contrast measurement with a typical micro-Raman confocal system.

TL;DR: The ability of Raman spectroscopy to acquire the alignment distance between two edges of top and bottom GLs of BLG as small as several nanometers, which is far beyond the diffraction limit of a laser spot, opens the possibility to probe the edge alignment of multi-layer graphene.