基礎講座 電気泳動(Electrophoresis)

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

The semiconductor industry has been able to improve the performance of electronic systems for more than four decades by making ever-smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring a number of alternative device technologies. Here we review the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons. Field-effect transistors based on semiconductor nanotubes and graphene nanoribbons have already been demonstrated, and metallic nanotubes could be used as high-performance interconnects. Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material.

Carbon-based electronics.

Based on the achievement of synthesis of ZnO nanowires in mass production, ZnO nanowires gas sensors were fabricated with microelectromechanical system technology and ethanol-sensing characteristics were investigated. The sensor exhibited high sensitivity and fast response to ethanol gas at a work temperature of 300 °C. Our results demonstrate the potential application of ZnO nanowires for fabricating highly sensitive gas sensors.

Fabrication and ethanol sensing characteristics of ZnO nanowire gas sensors

Synthesis of carbon nanotubes by chemical vapor deposition over patterned catalyst arrays leads to nanotubes grown from specific sites on surfaces. The growth directions of the nanotubes can be controlled by van der Waals self-assembly forces and applied electric fields. The patterned growth approach is feasible with discrete catalytic nanoparticles and scalable on large wafers for massive arrays of novel nanowires. Controlled synthesis of nanotubes opens up exciting opportunities in nanoscience and nanotechnology, including electrical, mechanical, and electromechanical properties and devices, chemical functionalization, surface chemistry and photochemistry, molecular sensors, and interfacing with soft biological systems.

/pdf/carbon-nanotubes-synthesis-integration-and-properties-1kq36jxaj3.pdf

Carbon Nanotubes: Synthesis, Integration, and Properties

Single crystalline In/sub 2/O/sub 3/ nanowires were synthesized and then utilized to construct field effect transistors (FETs) consisting of individual nanowires. Chemical sensors based on these In/sub 2/O/sub 3/ nanowire FETs have been demonstrated. Upon exposure to gaseous molecules such as NO/sub 2/ and NH/sub 3/, the electrical conductance of the In/sub 2/O/sub 3/ nanowire FETs is found to be dramatically modified, accompanied by substantial shifts in the threshold gate voltage. Our In/sub 2/O/sub 3/ nanowire sensors exhibit significantly improved sensitivity to NO/sub 2/ gas, as well as shortened response times compared to most existing solid-state gas sensors. In addition, NH/sub 3/ gas sensing properties of In/sub 2/O/sub 3/ nanowires have also been carefully studied. Change of conductance in opposite directions was observed with different nanowire sensors. We suggest that this differential response is caused by various doping concentrations in the semiconducting In/sub 2/O/sub 3/ nanowires.

http://ieeexplore.ieee.org/iel5/8708/27593/01231710.pdf

Gas sensing properties of single-crystalline indium oxide nanowires

Laser Ablation Synthesis and Electronic Transport Studies of Tin Oxide Nanowires

A flexure assembly can have a stage that is deployed to a desired position by attachment of the flexure assembly to a housing. For example, a frame can be configured to be held in position by one portion of the housing and a deployment pad can be configured to be held in position by another portion of the housing. A deployment flexure can be configured to facilitate positioning of the frame and the deployment pad out-of-plane with respect to one another. The deployment flexure and a motion control flexure can facilitate movement of the stage with respect to the housing. In this manner, the position of the stage and the preload of the stage are determined by the housing.

MEMS deployment flexures

A package for moving a platform in six degrees of freedom, is provided. The platform may include an optoelectronic device mounted thereon. The package includes an in-plane actuator which may be a MEMS actuator and an out-of-plane actuator which may be formed of a piezoelectric element. The in-plane MEMS actuator may be mounted on the out-of-plane actuator mounted on a recess in a PCB. The in-plane MEMS actuator includes a plurality comb structures in which fingers of opposed combs overlap one another, i.e. extend past each other's ends. The out-of-plane actuator includes a central portion and a plurality of surrounding stages that are connected to the central portion. The in-plane MEMS actuator is coupled to the out-of-plane Z actuator to provide three degrees of freedom to the payload which may be an optoelectronic device included in the package.

MEMS actuator package architecture

Supercloseness of linear streamline diffusion finite element method on Bakhvalov-type mesh for singularly perturbed convection-diffusion equation in 1D

Xiaolei Liu

Papers

Gas sensing properties of single-crystalline indium oxide nanowires

Laser Ablation Synthesis and Electronic Transport Studies of Tin Oxide Nanowires

MEMS deployment flexures

MEMS actuator package architecture

Supercloseness of linear streamline diffusion finite element method on Bakhvalov-type mesh for singularly perturbed convection-diffusion equation in 1D