基礎講座 電気泳動(Electrophoresis)

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

The semiconductor industry has been able to improve the performance of electronic systems for more than four decades by making ever-smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring a number of alternative device technologies. Here we review the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons. Field-effect transistors based on semiconductor nanotubes and graphene nanoribbons have already been demonstrated, and metallic nanotubes could be used as high-performance interconnects. Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material.

Carbon-based electronics.

Based on the achievement of synthesis of ZnO nanowires in mass production, ZnO nanowires gas sensors were fabricated with microelectromechanical system technology and ethanol-sensing characteristics were investigated. The sensor exhibited high sensitivity and fast response to ethanol gas at a work temperature of 300 °C. Our results demonstrate the potential application of ZnO nanowires for fabricating highly sensitive gas sensors.

Fabrication and ethanol sensing characteristics of ZnO nanowire gas sensors

Synthesis of carbon nanotubes by chemical vapor deposition over patterned catalyst arrays leads to nanotubes grown from specific sites on surfaces. The growth directions of the nanotubes can be controlled by van der Waals self-assembly forces and applied electric fields. The patterned growth approach is feasible with discrete catalytic nanoparticles and scalable on large wafers for massive arrays of novel nanowires. Controlled synthesis of nanotubes opens up exciting opportunities in nanoscience and nanotechnology, including electrical, mechanical, and electromechanical properties and devices, chemical functionalization, surface chemistry and photochemistry, molecular sensors, and interfacing with soft biological systems.

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Carbon Nanotubes: Synthesis, Integration, and Properties

플랫폼을 6자유도로 운동시키는 패키지가 제공된다. 플랫폼은 그 위에 장착된 광전자 소자를 포함할 수 있다. 패키지는 MEMS 액튜에이터일 수 있는 면내 액튜에이터와 압전 소자로 구성될 수 있는 면외 액튜에이터를 포함한다. 면내 MEMS 액튜에이터는 PCB 내의 인입부에 장착된 면외 액튜에이터 상에 장착될 수 있다. 면내 MEMS 액튜에이터는 반대쪽 빗들의 빗살들의 서로 중첩, 즉 서로의 단부들을 지나 연장되는 복수의 빗 구조들을 포함한다. 면외 액튜에이터는 중앙 부분과 중앙 부분에 연결되는 복수의 둘러싸는 스테이지들을 포함한다. 면내 MEMS 액튜에이터는 면외 Z 액튜에이터에 결합되어 패키지에 포함된 광전자 소자가 될 수 있는 탑재물에 3 자유도를 제공한다.

Mems 액튜에이터 패키지 구조

A simplified MEMS fabrication process and MEMS device is provided that allows for cheaper and lighter-weight MEMS devices to be fabricated. The process comprises etching a plurality of holes or other feature patterns into a MEMS device, and then etching away the underlying wafer such that, after the etching process, the MEMS device is the required thickness and the individual die are separated, avoiding the extra steps of wafer thinning and die dicing. By etching trenches into the substrate wafer and filling them with a MEMS base material, sophisticated taller MEMS devices with larger force may be made.

Simplified MEMS device fabrication process

Synthesis and Characterization of CdO Nanoneedles

InN nanowires were synthesized and characterized using a variety of techniques. A two-zone chemical vapor deposition technique was employed to operate the vapor generation and the nanowire growth at differential temperatures, leading to high-quality products and growth rates as high as 4–10 μm/hour. The as-grown nanowires showed highly single-crystalline structures and precisely controlled diameters by using monodispersed gold clusters as the catalyst. Devices consisting of single nanowires have been fabricated to explore their electronic transport properties. The temperature dependence of the conductance revealed thermal emission as the dominating transport mechanism.

Synthesis and Electronic Properties of Single-Crystalline Indium Nitride Nanowires

We present a novel nanotube-on-insulator (NOI) approach to produce high-yield nanotube devices based on aligned single-walled carbon nanotubes. First, we managed to grow aligned nanotube arrays with controlled density on crystalline, insulating sapphire substrates, which bear analogy to industry-adopted silicon-on-insulator substrates. Based on the nanotube arrays, we demonstrated registration-free fabrication of both top-gated and polymer-electrolyte-gated field-effect transistors with minimized parasitic capacitance. In addition, we have successfully developed a way to transfer these aligned nanotube arrays to flexible substrates. Our approach has great potential for high-density, large-scale integrated systems based on carbon nanotubes for both micro- and flexible electronics.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400090126

Xiaolei Liu

Papers

Mems 액튜에이터 패키지 구조

Simplified MEMS device fabrication process

Synthesis and Characterization of CdO Nanoneedles

Synthesis and Electronic Properties of Single-Crystalline Indium Nitride Nanowires

A Novel Nanotube-on-Insulator (NOI) Approach toward Single-Walled Carbon Nanotube Devices