基礎講座 電気泳動(Electrophoresis)

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

The semiconductor industry has been able to improve the performance of electronic systems for more than four decades by making ever-smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring a number of alternative device technologies. Here we review the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons. Field-effect transistors based on semiconductor nanotubes and graphene nanoribbons have already been demonstrated, and metallic nanotubes could be used as high-performance interconnects. Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material.

Carbon-based electronics.

Based on the achievement of synthesis of ZnO nanowires in mass production, ZnO nanowires gas sensors were fabricated with microelectromechanical system technology and ethanol-sensing characteristics were investigated. The sensor exhibited high sensitivity and fast response to ethanol gas at a work temperature of 300 °C. Our results demonstrate the potential application of ZnO nanowires for fabricating highly sensitive gas sensors.

Fabrication and ethanol sensing characteristics of ZnO nanowire gas sensors

Synthesis of carbon nanotubes by chemical vapor deposition over patterned catalyst arrays leads to nanotubes grown from specific sites on surfaces. The growth directions of the nanotubes can be controlled by van der Waals self-assembly forces and applied electric fields. The patterned growth approach is feasible with discrete catalytic nanoparticles and scalable on large wafers for massive arrays of novel nanowires. Controlled synthesis of nanotubes opens up exciting opportunities in nanoscience and nanotechnology, including electrical, mechanical, and electromechanical properties and devices, chemical functionalization, surface chemistry and photochemistry, molecular sensors, and interfacing with soft biological systems.

/pdf/carbon-nanotubes-synthesis-integration-and-properties-1kq36jxaj3.pdf

Carbon Nanotubes: Synthesis, Integration, and Properties

A method for making an actuator includes forming a substantially planar actuator device of an electrically conductive material, the device incorporating an outer frame, a fixed frame attached to the outer frame, a moveable frame disposed parallel to the fixed frame, a motion control flexure coupling the moveable frame to the outer frame for coplanar, rectilinear movement relative to the outer frame and the fixed frame, an actuator incorporating a plurality of interdigitated teeth, a fixed portion of which is attached to the fixed frame and a moving portion of which is attached to the moveable frame, moving the moveable frame to a deployed position that is coplanar with, parallel to and spaced a selected distance apart from the fixed frame, and fixing the moveable frame at the deployed position for substantially rectilinear, perpendicular movement relative to the fixed frame.

Capillary actuator deployment

In one embodiment, an electrostatic actuator includes a generally planar fixed frame, a generally planar moving frame coupled to the fixed frame by a flexure for substantially coplanar, perpendicular movement relative to the fixed frame, a plurality of interdigitated teeth, a fixed portion of which is attached to the fixed frame and a moving portion of which is attached to the moving frame, and an elongated output shaft having opposite input and output ends, the input end being coupled to the moving frame.

Miniature mems actuator assemblies

The ambipolar random telegraph signal (RTS) (i.e., RTS in both hole conduction at negative gate biases and electron conduction at positive gate biases) is observed in an ambipolar carbon nanotube field-effect transistor (CNT-FET). Then, the ambipolar RTS is used to extract the small band gap of the SWNT. The determination of the small band gap CNT using RTS demonstrates a potentially high accuracy and stability. Other methods are provided to confirm the small band gap of the SWNT.

Determination of the small band gap of carbon nanotubes using the ambipolar random telegraph signal.

A method for making an actuator includes forming, e.g., using photolithography techniques, a substantially planar actuator device of an electrically conductive material, e.g., a semiconductor, to include an outer frame, a fixed frame coupled to the outer frame for rotational movement relative thereto, a moveable frame coupled to the outer frame for rotational movement relative thereto, and an actuator incorporating a plurality of interdigitated teeth, a fixed portion of which is attached to the fixed frame and a moving portion of which is attached to the moveable frame. The fixed frame is then rotated to a deployed position relative to the outer frame such that the fixed portion of the actuator teeth is disposed at a selected angle relative to the moving portion of the actuator teeth, and the position of the fixed frame relative to the outer frame is then fixed at the deployed position.

Rotationally deployed actuators

InN nanowires were synthesized and characterized using a variety of techniques. A two-zone chemical vapor deposition technique was employed to operate the vapor generation and the nanowire growth at differential temperatures, leading to high-quality products and growth rates as high as 4-10 /spl mu/m/hour. The as-grown nanowires showed highly single-crystalline structures and precisely controlled diameters by using monodispersed gold clusters as the catalyst. Devices consisting of single nanowires have been fabricated to explore their electronic transport properties. The temperature dependence of the conductance revealed thermal emission as the dominating transport mechanism.

Xiaolei Liu

Papers

Capillary actuator deployment

Miniature mems actuator assemblies

Determination of the small band gap of carbon nanotubes using the ambipolar random telegraph signal.

Rotationally deployed actuators

Synthesis of InN nanowires using a two-zone chemical vapor deposition approach