抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Laser ablation of solid targets by 0.2–5000 ps Ti: Sapphire laser pulses is studied. Theoretical models and qualitative explanations of experimental results are presented. Advantages of femtosecond lasers for precise material processing are discussed and demonstrated.

Femtosecond, picosecond and nanosecond laser ablation of solids

This Review article summarizes the key advantages of using quantum dots (QDs) as luminophores in light-emitting devices (LEDs) and outlines the operating mechanisms of four types of QD-LED. The key scientific and technological challenges facing QD-LED commercialization are identified, together with on-going strategies to overcome these challenges.

Emergence of colloidal quantum-dot light-emitting technologies

We report for the first time on a hole conductor-free mesoscopic methylammonium lead iodide (CH3NH3PbI3) perovskite/TiO2 heterojunction solar cell, produced by deposition of perovskite nanoparticles from a solution of CH3NH3I and PbI2 in γ-butyrolactone on a 400 nm thick film of TiO2 (anatase) nanosheets exposing (001) facets. A gold film was evaporated on top of the CH3NH3PbI3 as a back contact. Importantly, the CH3NH3PbI3 nanoparticles assume here simultaneously the roles of both light harvester and hole conductor, rendering superfluous the use of an additional hole transporting material. The simple mesoscopic CH3NH3PbI3/TiO2 heterojunction solar cell shows impressive photovoltaic performance, with short-circuit photocurrent Jsc= 16.1 mA/cm2, open-circuit photovoltage Voc = 0.631 V, and a fill factor FF = 0.57, corresponding to a light to electric power conversion efficiency (PCE) of 5.5% under standard AM 1.5 solar light of 1000 W/m2 intensity. At a lower light intensity of 100W/m2, a PCE of 7.3% was m...

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Mesoscopic CH3NH3PbI3/TiO2 heterojunction solar cells.

Summary form only given. Fundamental processes in atoms, molecules, as well as condensed matter are triggered or mediated by the motion of electrons inside or between atoms. Electronic dynamics on atomic length scales tends to unfold within tens to thousands of attoseconds (1 attosecond [as] = 10-18 s). Recent breakthroughs in laser science are now opening the door to watching and controlling these hitherto inaccessible microscopic dynamics. The key to accessing the attosecond time domain is the control of the electric field of (visible) light, which varies its strength and direction within less than a femtosecond (1 femtosecond = 1000 attoseconds). Atoms exposed to a few oscillations cycles of intense laser light are able to emit a single extreme ultraviolet (XUV) burst lasting less than one femtosecond. Full control of the evolution of the electromagnetic field in laser pulses comprising a few wave cycles have recently allowed the reproducible generation and measurement of isolated sub-femtosecond XUV pulses, demonstrating the control of microscopic processes (electron motion and photon emission) on an attosecond time scale. These tools have enabled us to visualize the oscillating electric field of visible light with an attosecond "oscilloscope", to control single-electron and probe multi-electron dynamics in atoms, molecules and solids. Recent experiments hold promise for the development of an attosecond X-ray source, which may pave the way towards 4D electron imaging with sub-atomic resolution in space and time.

Attosecond Physics

We report amplification of biomolecular recognition signal in lithographically defined silicon nanochannel devices. The devices are configured as field effect transistors (FET) in the reversed source-drain bias region. The measurement of the differential conductance of the nanowire channels in the FET allows sensitive detection of changes in the surface potential due to biomolecular binding. Narrower silicon channels demonstrate higher sensitivity to binding due to increased surface-to-volume ratio. The operation of the device in the negative source-drain region demonstrates signal amplification. The equivalence between protein binding and change in the surface potential is described.

Nanoscale field effect transistor for biomolecular signal amplification

Photoluminescence intermittency, or “blinking”, was observed in semiconductor InGaAs/GaAs quantum dots (QDs) inside a planar microcavity. Most of the blinking QDs were found around defect sites such as dislocation lines naturally formed in the GaAs barrier layers, and the carrier traps responsible for blinking had an excitation threshold of ∼1.53 eV. The blinking properties of epitaxial QDs and colloidal nanocrystal QDs were also compared by performing laser intensity dependent measurements and statistics of the “on” and “off” time distributions.

Photoluminescence Intermittency of InGaAs/GaAs Quantum Dots Confined in a Planar Microcavity

In order to fabricate photovoltaic (PV) cells incorporating light-trapping electrodes, flexible foil substrates, or more than one junction, illumination through the top-contact (i.e.: non-substrate) side of a photovoltaic device is desirable. We investigate the relative collection efficiency for illumination through the top vs. bottom of PbS colloidal quantum dot (CQD) PV devices. The external quantum efficiency spectra of FTO/TiO2/PbS CQD/ITO PV devices with various PbS layer thicknesses were measured for illumination through either the top (ITO) or bottom (FTO) contacts. By comparing the relative shapes and intensities of these spectra with those calculated from an estimation of the carrier generation profile and the internal quantum efficiency as a function of distance from the TiO2 interface in the devices, a substantial dead zone, where carrier extraction is dramatically reduced, is identified near the ITO top contact. The implications for device design, and possible means of avoiding the formation of such a dead zone, are discussed.

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Dead zones in colloidal quantum dot photovoltaics: evidence and implications.

The highest-performing colloidal quantum dot (CQD) photovoltaics (PV) reported to date have relied on high-temperature (>500°C) annealing of electron-accepting TiO2. Room-temperature processing red...

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A donor-supply electrode (DSE) for colloidal quantum dot photovoltaics.

A recombination layer with a gradient work function is provided which increases the power-conversion efficiency of multijunction photovoltaic devices by reducing the energy barrier to charge carriers migrating between pairs of photovoltaic junctions thereby facilitating the optimal recombination of opposing electron and hole currents generated when the photovoltaic is illuminated.

Xihua Wang

Papers

Nanoscale field effect transistor for biomolecular signal amplification

Photoluminescence Intermittency of InGaAs/GaAs Quantum Dots Confined in a Planar Microcavity

Dead zones in colloidal quantum dot photovoltaics: evidence and implications.

A donor-supply electrode (DSE) for colloidal quantum dot photovoltaics.

Photovoltaic devices with multiple junctions separated by a graded recombination layer