抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Laser ablation of solid targets by 0.2–5000 ps Ti: Sapphire laser pulses is studied. Theoretical models and qualitative explanations of experimental results are presented. Advantages of femtosecond lasers for precise material processing are discussed and demonstrated.

Femtosecond, picosecond and nanosecond laser ablation of solids

This Review article summarizes the key advantages of using quantum dots (QDs) as luminophores in light-emitting devices (LEDs) and outlines the operating mechanisms of four types of QD-LED. The key scientific and technological challenges facing QD-LED commercialization are identified, together with on-going strategies to overcome these challenges.

Emergence of colloidal quantum-dot light-emitting technologies

We report for the first time on a hole conductor-free mesoscopic methylammonium lead iodide (CH3NH3PbI3) perovskite/TiO2 heterojunction solar cell, produced by deposition of perovskite nanoparticles from a solution of CH3NH3I and PbI2 in γ-butyrolactone on a 400 nm thick film of TiO2 (anatase) nanosheets exposing (001) facets. A gold film was evaporated on top of the CH3NH3PbI3 as a back contact. Importantly, the CH3NH3PbI3 nanoparticles assume here simultaneously the roles of both light harvester and hole conductor, rendering superfluous the use of an additional hole transporting material. The simple mesoscopic CH3NH3PbI3/TiO2 heterojunction solar cell shows impressive photovoltaic performance, with short-circuit photocurrent Jsc= 16.1 mA/cm2, open-circuit photovoltage Voc = 0.631 V, and a fill factor FF = 0.57, corresponding to a light to electric power conversion efficiency (PCE) of 5.5% under standard AM 1.5 solar light of 1000 W/m2 intensity. At a lower light intensity of 100W/m2, a PCE of 7.3% was m...

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Mesoscopic CH3NH3PbI3/TiO2 heterojunction solar cells.

Summary form only given. Fundamental processes in atoms, molecules, as well as condensed matter are triggered or mediated by the motion of electrons inside or between atoms. Electronic dynamics on atomic length scales tends to unfold within tens to thousands of attoseconds (1 attosecond [as] = 10-18 s). Recent breakthroughs in laser science are now opening the door to watching and controlling these hitherto inaccessible microscopic dynamics. The key to accessing the attosecond time domain is the control of the electric field of (visible) light, which varies its strength and direction within less than a femtosecond (1 femtosecond = 1000 attoseconds). Atoms exposed to a few oscillations cycles of intense laser light are able to emit a single extreme ultraviolet (XUV) burst lasting less than one femtosecond. Full control of the evolution of the electromagnetic field in laser pulses comprising a few wave cycles have recently allowed the reproducible generation and measurement of isolated sub-femtosecond XUV pulses, demonstrating the control of microscopic processes (electron motion and photon emission) on an attosecond time scale. These tools have enabled us to visualize the oscillating electric field of visible light with an attosecond "oscilloscope", to control single-electron and probe multi-electron dynamics in atoms, molecules and solids. Recent experiments hold promise for the development of an attosecond X-ray source, which may pave the way towards 4D electron imaging with sub-atomic resolution in space and time.

Attosecond Physics

Solution-processed semiconductors that exhibit tunable light absorption and can be directly integrated into state-of-the-art silicon technologies are attractive for near-infrared (NIR) light detection in applications of medical imaging, night vision cameras, hyperspectral sensing, etc. Colloidal quantum dot (CQD) is regarded as a promising candidate for its solution-processability and superior optoelectronic properties. Here we propose an on-chip CQD photodetector, photodiode-oxide-semiconductor field-effect transistor, for NIR light sensing. This CMOS compatible device architecture utilizes silicon as a channel for carrier transport and PbS CQD as the light absorbing material controlling the channel conductivity. While the light with a wavelength longer than about 1100 nm cannot excite a photocurrent in commercial silicon-based photodetectors due to the absorption cutoff of silicon, the proposed photodetector can have responses owing to the usage of a PbS CQD photodiode. Simulations showed that the photodiode could provide photovoltage to the semiconductor, forming an inversion layer at the oxide-semiconductor interface, and the electron density at the interface is significantly enhanced. As a result, currents could flow through this layer with ease between the source and drain electrodes. For a proof-of-concept demonstration, we experimentally connected a CQD photodiode with a commercial silicon transistor and proved that the current from the transistor could be increased by photovoltage provided by the photodiode under NIR light illumination. The device shows a responsivity of 5.9A/W at the wavelength of 1250 nm.

On-chip colloidal quantum dot devices with a CMOS compatible architecture for near-infrared light sensing.

Microelectromechanical systems (MEMS) using flexible and/or stretchable polymers can bring new functions of conformal integration of sensors on flat and curved surfaces. Here, we report flexible strain/pressure sensors using polydimethylsiloxane (PDMS) and polyimide-based MEMS. The MEMS device architecture enables the integration of three electrical sensors, outputting digital signals, onto an area of 50 mm2 for strain and pressure detection. We show that engineered sensors with various sensitivities in bending mode can be applied to control robotic arms. Another demonstration of pressure sensing using these sensors enables the potential of pressure control in handling physical objects. Our integrated wearable flexible sensors, compared to widely used rigid sensors, derive flexibility and stretchability from polymer materials and have huge potential applications in robotics, prosthetics, and other wearable technologies requiring flexible sensors.

Polymer Microelectromechanical System-Integrated Flexible Sensors for Wearable Technologies

Flexible electronics, which is of great importance as fundamental sensor and communication technologies for many internet-of-things applications, has established a huge market encroaching into the trillion-dollar market of solid state electronics. For the capability of being processed by printing or spraying, colloidal quantum dots (CQDs) play an increasingly important role in flexible electronics. Although the electrical properties of CQD thin-films are expected to be stable on flexible substrates, their electrical performance could be tuned for applications in flexible touch sensors. Here, we report CQD touch sensors employing polydimethylsiloxane (PDMS) triboelectric films. The electrical response of touching activity is enhanced by incorporating CQD field-effect transistors into the device architecture. Thanks to the use of the CQD thin film as a current amplifier, the field-effect CQD touch sensor shows a fast response to various touching materials, even being bent to a large curvature. It also shows a much higher output current density compared to a PDMS triboelectric touch sensor.

Field-effect enhanced triboelectric colloidal quantum dot flexible sensor

Laser induction of graphene onto lignin-upgraded flexible polymer matrix

Silicon nanochannel field effect transistor (FET) biosensors are one of the most promising technologies in the development of highly sensitive and label-free analyte detection for cancer diagnostics. With their exceptional electrical properties and small dimensions, silicon nanochannels are ideally suited for extraordinarily high sensitivity. In fact, the high surface-to-volume ratios of these systems make single molecule detection possible. Further, FET biosensors offer the benefits of high speed, low cost, and high yield manufacturing, without sacrificing the sensitivity typical for traditional optical methods in diagnostics. Top down manufacturing methods leverage advantages in Complementary Metal Oxide Semiconductor (CMOS) technologies, making richly multiplexed sensor arrays a reality. Here, we discuss the fabrication and use of silicon nanochannel FET devices as biosensors for breast cancer diagnosis and monitoring.

Xihua Wang

Papers

On-chip colloidal quantum dot devices with a CMOS compatible architecture for near-infrared light sensing.

Polymer Microelectromechanical System-Integrated Flexible Sensors for Wearable Technologies

Field-effect enhanced triboelectric colloidal quantum dot flexible sensor

Laser induction of graphene onto lignin-upgraded flexible polymer matrix

Field Effect Transistor Nanosensor for Breast Cancer Diagnostics