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Xincheng Xie

Researcher at Peking University

Publications -  180
Citations -  6353

Xincheng Xie is an academic researcher from Peking University. The author has contributed to research in topics: Quantum Hall effect & Topological insulator. The author has an hindex of 40, co-authored 173 publications receiving 5834 citations. Previous affiliations of Xincheng Xie include Oklahoma State University–Stillwater & Chinese Academy of Sciences.

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Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry

TL;DR: By studying the voltage-dependent standing wave patterns, the energy dispersion E(k) is determined, which confirms the Dirac cone structure of the topological states, and shows that, very different from the conventional surface states, backscattering of theTopological states by nonmagnetic impurities is completely suppressed.
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Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit

TL;DR: In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown Bi2Te3 films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers.
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Site-specific kondo effect at ambient temperatures in iron-based molecules

TL;DR: It is shown that for iron phthalocyanine a Kondo temperature in spectroscopic measurements which is well above room temperature is found, and that the signal of the resonance depends strongly on the adsorption site of the molecule on a gold surface.
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Numerical study of the topological Anderson insulator in HgTe/CdTe quantum wells

TL;DR: In this article, the disorder effect on the transport properties in the HgTe/CdTe semiconductor quantum wells was studied and it was shown that at moderate disorder strength, the initially unquantized two-terminal conductance becomes quantized and the system makes a transition to the topological Anderson insulator (TAI).