G
Guang Wang
Researcher at National University of Defense Technology
Publications - 59
Citations - 2592
Guang Wang is an academic researcher from National University of Defense Technology. The author has contributed to research in topics: Graphene & Thin film. The author has an hindex of 20, co-authored 58 publications receiving 2085 citations. Previous affiliations of Guang Wang include Tsinghua University & Pennsylvania State University.
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Journal ArticleDOI
Superconductivity in one-atomic-layer metal films grown on Si(111)
Tong Zhang,Peng Cheng,Wen Juan Li,Yu-Jie Sun,Guang Wang,Xie-Gang Zhu,Ke He,Lili Wang,Xucun Ma,Xi Chen,Yayu Wang,Ying Liu,Hai Qing Lin,Jin-Feng Jia,Qi-Kun Xue +14 more
TL;DR: The epitaxial films of lead and indium represent the thinnest superconductors possible as discussed by the authors, and have been shown to have superconductivity on silicon substrates.
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Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit
Yaoyi Li,Guang Wang,Xie-Gang Zhu,Minhao Liu,Cun Ye,Xi Chen,Yayu Wang,Ke He,Lili Wang,Xucun Ma,Haijun Zhang,Xi Dai,Zhong Fang,Xincheng Xie,Ying Liu,Xiao-Liang Qi,Jin-Feng Jia,Shou-Cheng Zhang,Qi-Kun Xue,Qi-Kun Xue +19 more
TL;DR: In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown Bi2Te3 films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers.
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Mechanical and electronic properties of monolayer MoS2 under elastic strain
TL;DR: In this article, the elastic constants and electronic structures of two-dimensional monolayer MoS 2 under elastic strain using the first-principles calculations were analyzed and the in-plane stiffness and Poisson ratio calculated in the harmonic elastic strain range were found to be 123 N/m and 0.25, indicating that monollayer MoS2 is much softer than graphene.
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Topological insulator thin films of Bi2Te3 with controlled electronic structure.
Guang Wang,Xie-Gang Zhu,Yi-Yang Sun,Yaoyi Li,Tong Zhang,Jing Wen,Xi Chen,Ke He,Lili Wang,Xucun Ma,Jin-Feng Jia,Shengbai Zhang,Qi-Kun Xue,Qi-Kun Xue +13 more
TL;DR: Topological insulator thin films of Bi2Te3 with controlled electronic structure can be grown by regulating the molecular beam epitaxy growth kinetics without any extrinsic doping, a step toward controlling topological surface states.
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Growth of millimeter-size single crystal graphene on Cu foils by circumfluence chemical vapor deposition.
Chaocheng Wang,Wei Chen,Cheng Han,Guang Wang,Binbing Tang,Changxin Tang,Yan Wang,Wennan Zou,Xueao Zhang,Shiqiao Qin,Shengli Chang,Li Wang +11 more
TL;DR: The structural analyses demonstrate that single crystal monolayer graphene with a lateral size of 1.9 mm can be grown on the copper foils under the optimized growth condition and the mobility of such single crystal graphene is around 2400 cm2/Vs.