Xingtong Liu

TL;DR: It is shown that it is possible to improve both the light extraction efficiency (LEE) and current spreading of an FCLED by incorporating a highly reflective metallic reflector made from silver (Ag), which paves the way towards higher-performance LED technology.

TL;DR: The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UVLED with sputtered AlNNL was the lowest.

TL;DR: Owing to negligibly small spreading resistance of Ag, however, the combined numerical and experimental results show that the FCLED with Ag/TiW has a more favorable current spreading uniformity in comparison to the F CLED with ITO/DBR.

TL;DR: The findings suggest the potential of implementing optimized V-pits embedded in an InGaN/GaN SL or low-temperature GaN structure as a beneficial underlying layer for the realization of highly efficient green LEDs.

TL;DR: The experimental data suggest that high-efficiency green LEDs can be realized by growing InGaN/GaN multiple quantum wells on sputtered AlN/sapphire template with reduced in-plane compressive strain and improved crystal quality.