Xuan Zhang

TL;DR: In a single Hall bar device designed from this multilayer structure, three logic gates including AND, NAND, and NOT are reconfigured, which opens a gateway toward practical programmable spin-logic devices.

TL;DR: In this paper, the spin Hall effect in magnetic films with perpendicular anisotropy was used to construct a spin logic device with nonvolatility and scalability, which could pave the way towards application of spintronics in logic circuits as well as the memory industry in the near future.

TL;DR: In this paper, a bias current that is normal to the switching current is introduced to tune the magnitude of effective damping-like and field-like torques and further electrically control magnetization switching.

TL;DR: Using polarization engineering, the thermal stability of the interface between BiFeO3 and CoFeB can be improved by about 100°C, which provides new insight into the chemistry of the metal/oxide heterointerface.

TL;DR: In this paper, a spin-orbit torque based spin logic cell integrated with five frequently used logic functions (AND, OR, NOT, NAND and NOR) is presented, where the information stored in cells is symmetry-protected, making it possible to expand into logic gate array where the cell can be manipulated one by one without changing the information of other undesired cells.