Z
Z. H. Yuan
Researcher at Chinese Academy of Sciences
Publications - 23
Citations - 597
Z. H. Yuan is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Magnetoresistance & Spintronics. The author has an hindex of 13, co-authored 23 publications receiving 513 citations. Previous affiliations of Z. H. Yuan include South China Agricultural University.
Papers
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Journal ArticleDOI
Observation of magnon-mediated electric current drag at room temperature
Hao Wu,Caihua Wan,Xiuhui Zhang,Z. H. Yuan,Zhang Qinyao,J. Y. Qin,Hongyuan Wei,Xiufeng Han,Shufeng Zhang +8 more
TL;DR: In this paper, it was shown that magnons, quasiparticles representing low-energy excitations of ferromagnetic materials, can serve as effective spin information carriers as well.
Journal ArticleDOI
Spin gapless semiconductor like Ti2MnAl film as a new candidate for spintronics application
TL;DR: In this paper, a novel Heusler ferrimagnet Ti2MnAl film has been grown on Si(001) substrate using magnetron sputtering, which revealed the spin-gapless-semiconductor (SGS) nature of the stoichiometric material, in agreement with theoretical prediction.
Patent
Nanometer magnetic multilayer film for temperature sensor and manufacturing method therefor
TL;DR: In this article, a magnetic multilayer film for temperature sensor is described, which consists of a bottom magnetic composite layer provided on a substrate, the bottom magnetic composites layer having a direct pinning structure, an indirect pinning, a synthetic ferromagnetic structure, or a synthetic anti-ferromagnetic structures.
Journal ArticleDOI
Programmable Spin Logic Based on Spin Hall Effect in a Single Device
Caihua Wan,Xuan Zhang,Z. H. Yuan,Chi Fang,W. J. Kong,Qintong Zhang,Hao Wu,Usman Khan,Xiufeng Han +8 more
TL;DR: In this paper, the spin Hall effect in magnetic films with perpendicular anisotropy was used to construct a spin logic device with nonvolatility and scalability, which could pave the way towards application of spintronics in logic circuits as well as the memory industry in the near future.
Journal ArticleDOI
Field-free spin Hall effect driven magnetization switching in Pd/Co/IrMn exchange coupling system
W. J. Kong,Yang Ji,X. Zhang,Hao Wu,Quande Zhang,Z. H. Yuan,Caihua Wan,Xiufeng Han,Tian Yu,Kenji Fukuda,Hiroshi Naganuma,Hiroshi Naganuma,Mean Jue Tung +12 more
TL;DR: In this article, an antiferromagnetic material IrMn can be used as a functional layer to realize field-free magnetization switching driven by spin-orbit torque (SOT) without field.