X
Xuan Zhu
Researcher at National University of Defense Technology
Publications - 6
Citations - 204
Xuan Zhu is an academic researcher from National University of Defense Technology. The author has contributed to research in topics: Amorphous solid & Thin film. The author has an hindex of 6, co-authored 6 publications receiving 177 citations.
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Journal ArticleDOI
Analog memristors based on thickening/thinning of Ag nanofilaments in amorphous manganite thin films.
TL;DR: A new analog memristor based on metal nanofilaments thickening/thinning in ECM cells, which can be extended to other resistive switching materials, and may enable the development of beyond von Neumann computers.
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Nonvolatile bipolar resistive switching in amorphous Sr-doped LaMnO3 thin films deposited by radio frequency magnetron sputtering
TL;DR: Amorphous Sr-doped LaMnO3 (a-LSMO) thin films were deposited on Pt/Ti/SiO2/Si substrate by radio frequency magnetron sputtering as discussed by the authors.
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Diode-like volatile resistive switching properties in amorphous Sr-doped LaMnO3 thin films under lower current compliance
TL;DR: In this paper, the diode-like volatile resistive switching (RS) properties of anamorphous Sr-doped LaMnO3 (a-LSMO) thin films were investigated under lower compliance current (CC).
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Programmable metallization cells based on amorphous La0.79Sr0.21MnO3 thin films for memory applications
TL;DR: In this article, a programmable metallization cell based on amorphous La0.79Sr0.21MnO3 (a-LSMO) thin films for nonvolatile memory applications was demonstrated.
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Nanoscale electrochemical metallization memories based on amorphous (La, Sr)MnO3 using ultrathin porous alumina masks
TL;DR: In this article, the resistive switching properties of the individual Ag/a-LSMO/Pt ECM cell were directly measured using a conductive atomic force microscope and the cells exhibited typical RS characteristics and the OFF/ON resistance ratio is as high as 102.