Y. El Gmili

TL;DR: In this article, the authors demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE, which consists in periodically inserting ultra-thin GaN interlayers during the growth process.

Abstract: Abstract In this paper we demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE. The solution consists in periodically inserting ultra-thin GaN interlayers during InGaN growth. Measurements by HAADF-STEM, X-ray diffraction, cathodoluminescence and photoluminescence demonstrate the effective suppression of the three-dimensional sublayer that is shown to spontaneously form in control InGaN epilayers grown without this method. Simulation predicts that tunneling through the GaN barriers is efficient and that carrier transport through this semi-bulk InGaN/GaN structure is similar to that of bulk InGaN. Such structures may be useful for improving the efficiency of InGaN solar cells by allowing thicker, higher quality InGaN absorption layers.

TL;DR: In this paper, a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the latter consisting of periodic thin GaN interlayers inserted during inGaN growth, is shown that such a structure suppresses the In concentration fluctuations and corresponding different states of strain relaxation with depth.

TL;DR: In this paper, a five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE, which enables the development of BAlGaN based multi-layered heterostructures for UV and deep UV applications.