Konstantinos Pantzas

TL;DR: In this article, a tensile strain was applied to a 300nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, to transform it into a direct-band gap semiconductor that supports lasing.

TL;DR: Using the thermodynamic data available in the literature, numerical and analytical models of the composition profiles suggest that atomically sharp interfaces are attainable for catalyst droplets of small volumes.

TL;DR: In this article, high reflective deep UV distributed Bragg reflectors (DBRs) based on the BAlN material system have been grown by metalorganic vapour phase epitaxy on AlN template substrates.

TL;DR: In this article, the authors demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE, which consists in periodically inserting ultra-thin GaN interlayers during the growth process.

Abstract: Abstract In this paper we demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE. The solution consists in periodically inserting ultra-thin GaN interlayers during InGaN growth. Measurements by HAADF-STEM, X-ray diffraction, cathodoluminescence and photoluminescence demonstrate the effective suppression of the three-dimensional sublayer that is shown to spontaneously form in control InGaN epilayers grown without this method. Simulation predicts that tunneling through the GaN barriers is efficient and that carrier transport through this semi-bulk InGaN/GaN structure is similar to that of bulk InGaN. Such structures may be useful for improving the efficiency of InGaN solar cells by allowing thicker, higher quality InGaN absorption layers.