4.1. Nanomachining with Scanning Probes 1831 4.2. Soft Lithography 1832 4.3. Embossing with Rigid Masters 1835 4.4. Near-Field Phase-Shifting Photolithography 1835 4.5. Topographically Directed Photolithography 1837 4.6. Topographically Directed Etching 1837 4.7. Lithography with Neutral Metastable Atoms 1838 4.8. Approaches to Size Reduction 1839 5. Techniques for Making Regular or Simple Patterns 1839

https://www.engr.colostate.edu/ECE581/fall07/xia%20chem%20rev%2099.pdf

Unconventional Methods for Fabricating and Patterning Nanostructures.

This paper reviews the state of the art of optical coherence tomography (OCT), an interferometric imaging technique that provides cross-sectional views of the subsurface microstructure of biological tissue. Following a discussion of the basic theory of OCT, an overview of the issues involved in the design of the main components of OCT systems is presented. The review concludes by introducing new imaging modes being developed to extract additional diagnostic information.

Optical coherence tomography (OCT): a review

Self-organization of nanostructures in semiconductor heteroepitaxy

This article presents a comprehensive review of recent progress of research dedicated to low-dimensional nanomaterials constructed from functional low-molecular-weight organic compounds, whose optoelectronic properties are fundamentally different from those of their inorganic counterparts. After introducing the development of inorganic and organic macromolecular nanomaterials, we begin with a general review of the construction strategies for achieving both zero-dimensional (OD) and one-dimensional (ID) nanostructures from small organic functional molecules. We then provide an overview of the unique optoelectronic properties induced by molecular aggregation in the nanostructures. Special emphasis is put on the luminescent properties that are different from those of the corresponding bulk materials, such as aggregation-induced enhanced emission, fluorescence narrowing, multi-color emission, and tunable and switchable emissions from doped nanostructures. We conclude with a summary and our personal view of the direction of future development of organic opto-functional nanomaterials and devices.

Low-Dimensional Nanomaterials Based on Small Organic Molecules: Preparation and Optoelectronic Properties†

This paper reports two fundamental observations on the size-dependent optical properties of colloidal gold nanoparticles. First, faceted gold nanocrystals in the size range of 63 ± 3 nm have been found to be highly efficient for surface-enhanced Raman scattering (SERS). These nanocrystals are identified from a heterogeneous population for large optical enhancement at 647-nm laser excitation. Second, spatially isolated single gold particles emit Stokes-shifted Raman photons in an intermittent on-and-off fashion. In contrast to population-averaged studies, blinking surface-enhanced Raman scattering is a signature of single-particle (or even single-molecule) behavior. By directly measuring optical enhancement and time-resolved emission on single nanoparticles, this work opens new possibilities in studying the mechanisms of SERS, in developing metal tips for near-field optical microscopy, and in designing new nanostructured materials.

Efficient Raman enhancement and intermittent light emission observed in single gold nanocrystals

Visible-stimulated emission in a semiconductor quantum dot (QD) laser structure has been demonstrated. Red-emitting, self-assembled QDs of highly strained InAlAs have been grown by molecular beam epitaxy on a GaAs substrate. Carriers injected electrically from the doped regions of a separate confinement heterostructure thermalized efficiently into the zero-dimensional QD states, and stimulated emission at ∼707 nanometers was observed at 77 kelvin with a threshold current of 175 milliamperes for a 60-micrometer by 400-micrometer broad area laser. An external efficiency of ∼8.5 percent at low temperature and a peak power greater than 200 milliwatts demonstrate the good size distribution and high gain in these high-quality QDs.

https://science.sciencemag.org/content/sci/274/5291/1350.full.pdf

Red-Emitting Semiconductor Quantum Dot Lasers

Intermixing the wells and barriers of quantum-well (QW) laser heterostructures generally results in an increase in the bandgap energy and is accompanied by changes in the refractive index. A technique, based on ion implantation-induced QW intermixing, has been developed to enhance the quantum-well intermixing (QWI) rate in selected areas of a wafer. Such processes offer the prospect of a powerful and simple fabrication route for the integration of discrete optoelectronic devices and for forming photonic integrated circuits.

Photonic integrated circuits fabricated using ion implantation

Quantum-dot laser diodes with up to five well-defined electronic shells are fabricated using self-assembled quantum dots (QDs) grown by molecular-beam epitaxy. Shape-engineered stacks of self-aligned QDs with improved uniformity are used to increase the gain in the active region. Lasing is observed in the upper QD shells for small-gain media, and progresses towards the QD ground states for longer cavity lengths. We obtained at 77 K thresholds of Jth=15 A/cm2 for a 2 mm cavity lasing in the first excited state (p shell), and Jth=125 A/cm2 for a 1 mm cavity lasing in n=3 (d shell). At 300 K for a 1 mm cavity, Jth is 490 A/cm2 with lasing in n=4 (f shell).

Lasing in quantum-dot ensembles with sharp adjustable electronic shells

The technique of ion‐induced quantum well intermixing using broad area, high energy (1 MeV P+) ion implantation has been used to tune the emission wavelength of an InGaAs/InGaAsP/InP multiple quantum well (MQW) laser operating at 1.5 μm. The optical quality of the band‐gap shifted material is assessed using low‐temperature photoluminescence (PL). The band‐gap tuned lasers are characterized in terms of threshold current density and external quantum efficiency and exhibit blue shifts in the lasing spectra of up to 63 nm. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating active as well as passive optoelectronic devices.

Band-gap tuning of InGaAs/InGaAsP/InP laser using high energy ion implantation

We present results of calculations and ``lateral'' magnetotunneling experiments on small quantum dots in the few-electron regime. In the transition from a spin-unpolarized to a spin-polarized droplet, a systematic oscillation of the chemical potential of the droplet as a function of the magnetic field correlates with oscillations in the current amplitude. The temperature dependence of the current minima indicates that the minima are associated with the collapse of the Zeeman gap in the quantum Hall droplet. The collapse of the Zeeman gap is associated with the nontrivial magnetic field dependence of the spin polarization of a quantum Hall droplet due to electronic correlations.

Yan Feng

Papers

Red-Emitting Semiconductor Quantum Dot Lasers

Photonic integrated circuits fabricated using ion implantation

Lasing in quantum-dot ensembles with sharp adjustable electronic shells

Band-gap tuning of InGaAs/InGaAsP/InP laser using high energy ion implantation

Collapse of the Zeeman gap in quantum dots due to electronic correlations