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Yang Yang

Researcher at Rice University

Publications -  21
Citations -  1496

Yang Yang is an academic researcher from Rice University. The author has contributed to research in topics: Graphene & Borophene. The author has an hindex of 11, co-authored 21 publications receiving 1147 citations. Previous affiliations of Yang Yang include Fudan University & Nanjing University of Aeronautics and Astronautics.

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Two-Dimensional Boron Monolayers Mediated by Metal Substrates

TL;DR: The preferred 2D boron on weaker interacting Au is nonplanar with significant buckling and numerous polymorphs as in vacuum, whereas on more reactive Ag, Cu, and Ni, the polymorphic energy degeneracy is lifted and a particular planar structure is found to be most stable.
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Elasticity, Flexibility, and Ideal Strength of Borophenes

TL;DR: In this paper, the mechanical properties of 2D boron have been studied by first-principles calculations, and it was shown that borophene has a specific modulus of 346 m2 s−2 and ideal strength of 16 N m−1, rivaling those of graphene.
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Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers

TL;DR: A direct chemical conversion reaction is demonstrated, which systematically converts the hexagonal carbon lattice of graphene to boron nitride, making it possible to produce uniform borOn nitride and bor on carbonitride structures without disrupting the structural integrity of the original graphene templates.
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Elasticity, Flexibility and Ideal Strength of Borophenes

TL;DR: In this paper, the structural properties of 2D boron, borophenes, were studied by first-principles calculations and it was shown that borophene has a specific modulus of 346 m2/s2 and ideal strength of 16 N/m.
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Solution Synthesis of Semiconducting Two-Dimensional Polymer via Trimerization of Carbonitrile.

TL;DR: The first solution synthesis of a single-layer/few-layer triazine-based 2DP via trimerization of carbonitrile at the interface of dichloromethane and trifluoromethanesulfonic acid is reported, which can function as the active semiconducting layer in a field-effect transistor via drop coating.