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Yaroslav Blanter

Researcher at Delft University of Technology

Publications -  7
Citations -  893

Yaroslav Blanter is an academic researcher from Delft University of Technology. The author has contributed to research in topics: Aharonov–Bohm effect & Surface micromachining. The author has an hindex of 5, co-authored 7 publications receiving 768 citations.

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Topological Confinement in Bilayer Graphene

TL;DR: In this paper, a new type of one-dimensional chiral states that can be created in bilayer graphene (BLG) by electrostatic lateral confinement was studied. But their properties are defined by the unusual chiral quasiparticles, from which they derive.
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Aharonov-Bohm effect and broken valley degeneracy in graphene rings

TL;DR: In this paper, the authors analyzed the electronic properties of Aharonov-Bohm rings made of graphene and showed that the combined effect of the ring confinement and applied magnetic flux offers a controllable way to lift the orbital degeneracy originating from the two valleys, even in the absence of intervalley scattering.
Journal Article

Aharonov-Bohm effect and broken valley-degeneracy in graphene rings

TL;DR: In this article, the authors analyzed the electronic properties of Aharonov-Bohm rings made of graphene and showed that the combined effect of the ring confinement and applied magnetic flux offers a controllable way to lift the orbital degeneracy originating from the two valleys, even in the absence of intervalley scattering.
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Ultrafast control of magnetic interactions via light-driven phonons.

TL;DR: In this paper, it was shown that light-driven phonons can be utilized to coherently manipulate macroscopic magnetic states, and the potential of resonant phonon excitation for the manipulation of ferroic order on ultrafast timescales.
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Self-consistent theory of molecular switching

TL;DR: In this paper, the authors study the model of a molecular switch comprised of a molecule with a soft vibrational degree of freedom coupled to metallic leads and determine the stationary currentvoltage characteristics of the device and the switching dynamics for symmetric and asymmetric devices.