P
Ping Xu
Researcher at Applied Materials
Publications - 10
Citations - 470
Ping Xu is an academic researcher from Applied Materials. The author has contributed to research in topics: Layer (electronics) & Silicon carbide. The author has an hindex of 6, co-authored 10 publications receiving 470 citations.
Papers
More filters
Patent
Method of depositing dielectric materials in damascene applications
Ju-hyung Lee,Ping Xu,Shankar Venkataraman,Li-Qun Xia,Fei Han,Ellie Yieh,Srinivas D. Nemani,Kangsub Yim,Farhad Moghadam,Ashok Sinha,Yi Zheng +10 more
TL;DR: In this paper, a method for depositing an oxygen-doped dielectric layer may be used for a barrier layer or a hardmask, which is used as a barrier in damascene or dual damascenes applications.
Patent
Method of depositing dielectric films
Srinivas D. Nemani,Li-Qun Xia,Dian Sugiarto,Ellie Yieh,Ping Xu,Francimar Campana-Schmitt,Jia Lee +6 more
TL;DR: In this paper, a method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field.
Patent
Fluorine-containing layers for damascene structures
TL;DR: In this article, a method of forming a silicon carbide layer, a silicon nitride layer, an organosilicate layer, and a silicon carbonide layer in the presence of an electric field is described.
Patent
Method of deposition of silicon carbide film in integrated circuit fabrication
Francimar Campana-Schmitt,Jia Lee,Srinivas D. Nemani,Dian Sugiarto,Li-Qun Xia,Ping Xu,Ellie Yieh +6 more
TL;DR: In this paper, a method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field.
Patent
Plasma treatment of silicon carbide films
TL;DR: In this article, a method of forming a multilayer silicon carbide stack is described, which consists of a thin seed layer and a much thicker seed layer, and is compatible with integrated circuit fabrication processes.