Y
Ying Zhang
Researcher at Applied Materials
Publications - 8
Citations - 148
Ying Zhang is an academic researcher from Applied Materials. The author has contributed to research in topics: Plasma & Electron temperature. The author has an hindex of 4, co-authored 7 publications receiving 139 citations.
Papers
More filters
Patent
Feol low-k spacers
Kenneth S. Collins,Kartik Ramaswamy,Ying Zhang,Hua Chang,Leonid Dorf,Ming-Feng Wu,Shahid Rauf +6 more
TL;DR: In this article, the authors describe the formation of a transistor using low-K dielectric constant material (e.g., a void) between an elongated gate and a contact to increase the attainable switching speed of the device.
Journal ArticleDOI
Etching with atomic precision by using low electron temperature plasma
Leonid Dorf,J. C. Wang,Shahid Rauf,Gonzalo Antonio Monroy,Ying Zhang,Ankur Agarwal,Jason A. Kenney,Kartik Ramaswamy,Kenneth S. Collins +8 more
TL;DR: In this paper, an electron sheet beam parallel to the substrate surface is used to produce a plasma in this system, which has a significantly lower electron temperature T e ~ 0.3 eV and ion energy E i < 3 eV (without applied bias).
Patent
Electron beam plasma source with remote radical source
Ming-Feng Wu,Leonid Dorf,Shahid Rauf,Ying Zhang,Kenneth S. Collins,Hamid Tavassoli,Kartik Ramaswamy,Steven Lane +7 more
TL;DR: In this article, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process chamber for processing a workpiece, where the electron beam and the radical source are separated.
Proceedings ArticleDOI
Atomic precision etch using a low-electron temperature plasma
Leonid Dorf,J. C. Wang,Shahid Rauf,Ying Zhang,Ankur Agarwal,Jason A. Kenney,Kartik Ramaswamy,Kenneth S. Collins +7 more
TL;DR: In this paper, an electron sheet beam parallel to the substrate surface produces a plasma with an order of magnitude lower electron temperature and ion energy compared to conventional radio-frequency (RF) plasma technologies.
Patent
Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching
Leonid Dorf,Kenneth S. Collins,Shahid Rauf,Kartik Ramaswamy,James D. Carducci,Hamid Tavassoli,Olga Regelman,Ying Zhang +7 more
TL;DR: In this paper, a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population was discussed, and the electron beam source was used for a plasma this paper having an RF-driven electrode for producing electron beam.